BLP10H690PY

BLP10H690PY

  • Description:RF MOSFET LDMOS 50V 4HSOPF
  • Series:-

SKU:a863b4d95a79 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V 4HSOPF
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1GHz
  • Gain:18dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:60 mA
  • Power - Output:90W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-1223-2
  • Supplier Device Package:4-HSOPF
  • Configuration:-

Download product information

BLP10H690PY

Overview

The BLP10H690P is a 90 W LDMOS power transistor designed for broadcast and industrial applications across the HF to 1000 MHz band. It features a drain-source voltage of 110 V, a junction temperature rating up to 225 °C, and a thermal resistance from junction to case of 0.9 K/W. At 720 MHz with pulsed RF operation, it delivers 90 W output power with 18 dB gain and 72% drain efficiency at a 50 V drain supply. The device supports Class C operation via integrated dual-sided ESD protection and exhibits excellent ruggedness against load mismatches exceeding 40:1 VSWR.

Feature Summary

  • Integrated dual-sided ESD protection enables Class C operation and complete switch-off capability
  • Designed for broadband operation spanning from HF frequencies up to 1000 MHz
  • High efficiency and excellent thermal stability for robust performance
  • Capable of withstanding severe load mismatches corresponding to VSWR > 40:1 through all phases

Applications

  • Industrial, scientific, and medical (ISM) applications
  • Broadcast transmitter applications

Procurement Notes

Verify the specific package variant required for the design, as the product line includes both the flat-lead HSOP4F (SOT1223-2) and standard lead HSOP4 (SOT1224-2) configurations. Confirm that the application environment adheres to the specified absolute maximum ratings, particularly regarding junction temperature limits and thermal management requirements. Ensure proper ESD handling procedures are followed during assembly due to the device's sensitivity classification.

Selection Notes

Select this component for designs requiring high power density in the HF to UHF range with stringent ruggedness requirements. The 110 V breakdown voltage provides headroom for standard 50 V operating conditions. Consider the thermal resistance characteristics when designing heatsinking solutions to maintain junction temperatures within safe limits during continuous or high-duty-cycle pulsed operations.

Part Context

This device belongs to Ampleon's LDMOS power transistor portfolio, specifically engineered for high-efficiency amplification in demanding RF environments. The BLP10H690P complements other models in the series by offering a balance of high output power and broadband frequency coverage, suitable for both linear and non-linear amplifier topologies in professional broadcasting and industrial equipment.

Replacement Considerations

Direct functional substitutes are not explicitly listed in the provided documentation. Designers should consult official Ampleon resources for cross-reference information or evaluate other devices within the same power and frequency class based on matching electrical parameters and package compatibility.

BLP10H690PYBLP10H690PY

Click on the inquiry