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The BLP15H9S100GZ is a 100 W LDMOS driver transistor manufactured by Ampleon, designed for broadcast and industrial applications. It operates in the frequency range from HF to 2 GHz with excellent ruggedness suitable for digital and analog transmitter designs. The device features an N-channel configuration housed in a TO-270-2G-1 package. Key electrical parameters include a drain-source breakdown voltage of 106 V, a typical power gain of 19 dB at 1400 MHz pulsed RF, and a drain efficiency of 56%. It supports a maximum junction temperature of 225 °C and includes integrated dual-sided ESD protection.
Verify the specific ordering suffix against the manufacturer's current data sheet to confirm packaging details. The BLP15H9S100GZ corresponds to the TR13 packing description with a minimum orderable quantity of 500 pieces. Confirm RoHS compliance status via official product details before procurement.
Select this component for applications requiring a 100 W output power level within the HF to 2 GHz spectrum. Ensure the design accommodates the TO-270-2G-1 package dimensions and thermal requirements. Verify that the operating conditions remain within the specified limiting values for drain-source voltage and gate-source voltage to maintain device integrity.
This part belongs to the BLP15 series of power LDMOS transistors from Ampleon. The series is engineered for high-performance driver stages in RF systems. The BLP15H9S100G variant specifically targets broadband coverage up to 2 GHz, distinguishing it from lower-frequency or different power variants within the same family.
Check the manufacturer's documentation for direct substitutes such as the BLP15M9S100GZ, which shares similar packaging but differs in breakdown voltage and operating frequency specifications. Ensure any replacement matches the required pinout and thermal resistance characteristics.