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The BLP15H9S10GXY is an N-channel LDMOS RF power transistor manufactured by Ampleon. It operates in the frequency range from HF to 2 GHz, designed for broadband applications. The device features a TO-270-2F-1 package with integrated dual-sided ESD protection and excellent ruggedness against high VSWR loads. Key electrical parameters include a drain-source voltage of 50 V, a maximum junction temperature of +225 °C, and a gate-source voltage range of -6 V to +11 V. It delivers 10 W output power with 19 dB gain at 2 GHz, suitable for broadcast and industrial transmitter applications.
Verify the specific ordering suffix and packaging configuration when sourcing. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor product details. Ensure storage conditions account for moisture sensitivity levels as indicated in the datasheet. Validate that the received component matches the exact part number designation before integration into production lines.
Select this component for designs requiring robust performance in the HF to 2 GHz spectrum. Consider the TO-270-2F-1 package for surface mount compatibility. Evaluate thermal resistance characteristics for heat sink design. Compare gain and efficiency metrics against alternative LDMOS devices if specific bandwidth or power constraints exist within the target application architecture.
This transistor belongs to the BLP15H9S series of LDMOS power transistors. It shares architectural similarities with other models in the family, such as the BLP15H9S30 and BLP15H9S100, differing primarily in output power capabilities and specific tuning for various frequency bands within the HF to 2 GHz range.
Direct substitutes may include other Ampleon LDMOS transistors from the same series with comparable pinouts and electrical ratings. Verify mechanical dimensions and thermal characteristics before swapping with components from different manufacturers to ensure PCB compatibility and adequate heat dissipation.