BLP15H9S30GXY

BLP15H9S30GXY

$14.42
  • Description:RF MOSFET LDMOS 50V SOT1483-1
  • Series:-

SKU:b7f8073d82aa Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT1483-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2GHz
  • Gain:21dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:140 mA
  • Power - Output:30W
  • Voltage - Rated:106 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1483-1
  • Supplier Device Package:SOT1483-1
  • Configuration:-

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BLP15H9S30GXY

Overview

The BLP15H9S30GXY is a 30 W LDMOS driver transistor manufactured by Ampleon. It operates in the frequency range from HF to 2 GHz and features a TO-270-2G-1 package with an exposed heatsink. The device has a drain-source breakdown voltage of 106 V, a gate-source threshold voltage of 2.0 V typical, and a drain-source on-state resistance of 0.89 Ω. At 1400 MHz pulsed RF, it delivers 30 W output power with 21 dB gain and 65% drain efficiency. Thermal resistance from junction to case is 1.9 K/W at 80 °C case temperature.

Feature Summary

  • Designed for broadband operation across HF to 2 GHz
  • Integrated dual-sided ESD protection
  • Excellent ruggedness suitable for digital and analog transmitters
  • High power gain and efficiency

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical (ISM) applications
  • Digital and analog transmitter applications

Procurement Notes

Verify the specific ordering suffix GXY against the manufacturer's current documentation to confirm packing details. The datasheet indicates this part number corresponds to TR7 packing with a minimum orderable quantity of 100 pieces. Ensure compliance with RoHS requirements as specified in the product details section of the official Ampleon website before finalizing procurement.

Selection Notes

Select this component for designs requiring high ruggedness and stability in Class-AB operation. Verify that the application can accommodate the 106 V drain-source breakdown voltage and the 225 °C maximum junction temperature. Consider the thermal management requirements associated with the 1.9 K/W junction-to-case thermal resistance for effective heat dissipation.

Part Context

This device belongs to the BLP15H9S series of power LDMOS transistors designed for broadcast and industrial use. It serves as a driver stage capable of handling significant load mismatches, specifically up to a VSWR of 30:1 through all phases under pulsed conditions. The series emphasizes reliability and ease of power control for high-frequency applications.

Replacement Considerations

Consult the official Ampleon datasheet for direct cross-reference information. No alternative part numbers are explicitly listed as substitutes within the provided documentation.

BLP15H9S30GXYBLP15H9S30GXY
$14.42
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