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The BLP15H9S30GZ is a 30 W LDMOS driver transistor designed for broadcast and industrial applications across HF to 2 GHz. It features a TO-270-2G-1 package with an exposed heatsink connected to the source. Key electrical parameters include a drain-source voltage of 106 V, gate-source voltage limits of -6 V to +11 V, and a junction temperature rating up to 225 °C. At 1400 MHz pulsed RF operation with 50 V drain bias, it delivers 30 W output power with 22 dB gain and 63% drain efficiency. The device exhibits excellent ruggedness, supporting VSWR mismatches up to 30:1.
Verify the specific ordering suffix against the manufacturer's current data sheet to confirm packaging details. The 'GZ' suffix corresponds to the TR13 packing description with a minimum orderable quantity of 500 pieces in a dry pack configuration. Ensure compliance with RoHS requirements as specified in the product details on the official Ampleon website before finalizing procurement orders.
Select this component for designs requiring high power density in a surface-mount TO-270-2G-1 package. The thermal resistance from junction to case is 1.9 K/W at 80 °C case temperature. Designers must account for the exposed heatsink connection to the source pin for proper grounding and thermal management. Verify that the application circuit can handle the maximum drain-source voltage of 106 V and junction temperature of 225 °C.
The BLP15H9S30GZ belongs to the BLP15H9S series of power LDMOS transistors manufactured by Ampleon. This series is engineered for robust performance in high-frequency amplifier stages. The device serves as a driver stage capable of handling significant power levels while maintaining stability and linearity across a broad frequency spectrum suitable for modern communication standards.
BLP15H9S30GXY is a verified alternative part number within the same family, differing primarily in packing description (TR7; 100-fold). Both share identical electrical specifications and package outline.