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The BLP15H9S30XY is a 30 W LDMOS driver transistor manufactured by Ampleon. It operates in the frequency range from HF to 2 GHz with a drain-source voltage of 106 V and a junction temperature rating up to 225 °C. The device features an on-state resistance of 0.89 Ω and delivers a typical power gain of 22 dB at 1400 MHz under pulsed RF conditions. Packaged in a TO-270-2F-1 surface-mount format, it includes integrated dual-sided ESD protection and exhibits excellent ruggedness for digital and analog transmitter applications.
Verify the specific ordering suffix XY against official Ampleon documentation to confirm packing details. The XY suffix indicates a TR7 packing format with a minimum orderable quantity of 100 pieces in a 24 mm dry pack. Ensure compliance with RoHS requirements as specified in the product details. Confirm that the TO-270-2F-1 package matches the design constraints before finalizing procurement orders.
Select this component for designs requiring a 30 W output power capability within the HF to 2 GHz spectrum. The device supports Class-AB operation with a thermal resistance of 1.9 K/W from junction to case. Consider the 106 V maximum drain-source voltage and 225 °C junction temperature limit when designing thermal management solutions. Verify input return loss and stability requirements against the application's impedance matching network.
The BLP15H9S30XY belongs to the BLP15H9S series of power LDMOS transistors from Ampleon. This series is engineered for robust performance in broadcast and industrial environments. The XY variant specifically denotes the reel packaging configuration, distinguishing it from other packing options like the Z suffix which utilizes a different reel specification.
BLP15H9S30Z is a verified alternative part number within the same family, offering identical electrical specifications but differing in packing description and minimum orderable quantity.