BLP15M9S100GZ

BLP15M9S100GZ

$22.29
  • Description:RF MOSFET LDMOS 32V SOT1483-1
  • Series:BLP

SKU:e2524b380974 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1483-1
  • Series:BLP
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.4GHz
  • Gain:18dB
  • Voltage - Test:32 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:100W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1483-1
  • Supplier Device Package:SOT1483-1
  • Configuration:Dual, Common Source

Download product information

BLP15M9S100GZ

Overview

The Ampleon BLP15M9S100GZ is an N-Channel LDMOS RF MOSFET transistor designed for high-power radio frequency applications. It operates at a frequency of 1.5 GHz and delivers an output power of 100 W with a gain of 16 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a low on-resistance (Rds(on)) of 143 mOhms. Gate-source voltage limits range from -5 V to +13 V, with a threshold voltage of 2.5 V. It is housed in a TO-270-2G-1-3 surface-mount package, supports a maximum operating temperature of +225°C, and is supplied in reel packaging.

Feature Summary

  • High-efficiency LDMOS technology optimized for broadband RF performance
  • Robust ruggedness capable of withstanding high VSWR loads
  • Integrated ESD protection for enhanced reliability

Applications

  • CW and modulated RF power amplifiers
  • AM/FM/TV broadcast transmitters
  • Industrial heating systems
  • Medical equipment

Procurement Notes

Verify the specific suffix GZ against official Ampleon documentation to confirm tape-and-reel specifications and moisture sensitivity levels. Ensure compatibility with TO-270-2G-1-3 footprint requirements during procurement planning. Cross-reference datasheet revisions to confirm parameter consistency before finalizing supply chain agreements.

Selection Notes

Select this component when 100 W output power at 1.5 GHz is required within a 65 V system. The 143 mOhm on-resistance supports efficient thermal management in compact designs. Verify that the 16 dB gain meets system link budget requirements. Confirm that the TO-270-2G-1-3 package aligns with available PCB real estate and thermal dissipation capabilities.

Part Context

This part belongs to the Ampleon BLP15M9S series of LDMOS transistors. It shares core electrical characteristics with variants like BLP15M9S100Z but differs in packaging configuration. The series is engineered for high-efficiency broadband applications across HF to 1400 MHz ranges, providing a scalable solution for various RF power amplifier architectures.

Replacement Considerations

BLP15M9S100Z offers identical electrical performance but utilizes a TO-270-2F-1-3 package. Verify mechanical footprint compatibility before substitution. Other series members like BLP15H9S100GXY differ significantly in voltage ratings and frequency targets.

BLP15M9S100GZBLP15M9S100GZ
$22.29
Buy Now