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The Ampleon BLP15M9S100GZ is an N-Channel LDMOS RF MOSFET transistor designed for high-power radio frequency applications. It operates at a frequency of 1.5 GHz and delivers an output power of 100 W with a gain of 16 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a low on-resistance (Rds(on)) of 143 mOhms. Gate-source voltage limits range from -5 V to +13 V, with a threshold voltage of 2.5 V. It is housed in a TO-270-2G-1-3 surface-mount package, supports a maximum operating temperature of +225°C, and is supplied in reel packaging.
Verify the specific suffix GZ against official Ampleon documentation to confirm tape-and-reel specifications and moisture sensitivity levels. Ensure compatibility with TO-270-2G-1-3 footprint requirements during procurement planning. Cross-reference datasheet revisions to confirm parameter consistency before finalizing supply chain agreements.
Select this component when 100 W output power at 1.5 GHz is required within a 65 V system. The 143 mOhm on-resistance supports efficient thermal management in compact designs. Verify that the 16 dB gain meets system link budget requirements. Confirm that the TO-270-2G-1-3 package aligns with available PCB real estate and thermal dissipation capabilities.
This part belongs to the Ampleon BLP15M9S series of LDMOS transistors. It shares core electrical characteristics with variants like BLP15M9S100Z but differs in packaging configuration. The series is engineered for high-efficiency broadband applications across HF to 1400 MHz ranges, providing a scalable solution for various RF power amplifier architectures.
BLP15M9S100Z offers identical electrical performance but utilizes a TO-270-2F-1-3 package. Verify mechanical footprint compatibility before substitution. Other series members like BLP15H9S100GXY differ significantly in voltage ratings and frequency targets.