BLP15M9S100XY

Overview

The Ampleon BLP15M9S100XY is an N-Channel LDMOS RF MOSFET transistor designed for high-power radio frequency applications. It operates at a frequency of 1.5 GHz, delivering an output power of 100 W with a gain of 15.7 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a low on-resistance (Rds On) of 143 mOhms. Gate-source voltage limits are specified from -5 V to +13 V, with a threshold voltage of 2.5 V. Housed in a TO-270-2F-1-3 surface-mount package, it supports a maximum operating temperature of +225 C and is supplied in a reel format.

Feature Summary

• High efficiency performance with significant power gain and drain efficiency to reduce thermal design complexity.
• Integrated dual-side ESD protection to enhance component reliability during handling and operation.
• Robust ruggedness capable of withstanding high Voltage Standing Wave Ratio (VSWR) loads for system stability.

Applications

• CW and modulated RF power amplifiers
• AM/FM/TV broadcast transmitters
• Industrial heating systems
• Medical equipment

Procurement Notes

Verify the specific suffix XY against official Ampleon documentation to confirm packaging details and moisture sensitivity classification. Ensure compatibility with TO-270-2F-1-3 footprints. Confirm RoHS compliance status through the manufacturer's current datasheet before integration into production lines requiring strict environmental standards.

Selection Notes

Select this component when 100 W output power at 1.5 GHz is required within a 65 V supply constraint. The 143 mOhm on-resistance suggests suitability for applications prioritizing conduction losses. Compare against the BLP15M9S70G series if higher frequency operation up to 2 GHz or different power levels are needed, noting the distinct package variations between models.

Part Context

This part belongs to the Ampleon BLP15M9S family of LDMOS transistors. It shares architectural similarities with variants like the BLP15M9S100G but differs in packaging and reel specifications indicated by the XY suffix. It serves as a core active element in RF power stages, distinct from lower-power logic MOSFETs or bipolar junction transistors used in similar frequency bands.

Replacement Considerations

The BLP15M9S100G is a related variant within the same product family. Verify pinout compatibility and package dimensions (TO-270-2F-1-3 vs. alternative) before substitution. Electrical parameters such as gain and output power should be cross-referenced to ensure equivalent performance in the target circuit design.