BLP15M9S30GZ

Overview

The Ampleon BLP15M9S30GZ is a general-purpose LDMOS RF power transistor designed for broadcast and ISM applications within the HF to 2 GHz frequency band. It delivers a rated output power of 30 W with high efficiency and gain. Key electrical parameters include a drain-source voltage limit of 65 V, a gate-source voltage range of -6 V to +13 V, and a maximum junction temperature of 225 °C. The device features a thermal resistance from junction to case of 1.9 K/W at Tcase = 85 °C. In pulsed Class-AB operation at 1400 MHz, it achieves a typical power gain of 19.3 dB and a drain efficiency of 71% at 30 W output.

Feature Summary

• Integrated dual-sided ESD protection for enhanced reliability
• Excellent ruggedness capable of withstanding high VSWR loads
• High power gain and drain efficiency for energy conservation
• Easy power control characteristics suitable for linear amplification

Applications

• Industrial, scientific, and medical (ISM) applications
• Broadcast transmitter applications
• RF power amplifiers for continuous wave (CW) operations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package type and packing configuration. Confirm RoHS compliance status via official product details before procurement. Ensure handling procedures adhere to ESD sensitivity classifications specified in the datasheet to prevent device damage during assembly and testing.

Selection Notes

Select this component for designs requiring robust performance in the HF to 2 GHz spectrum. Evaluate thermal management requirements based on the 1.9 K/W junction-to-case resistance. Consider the 65 V drain-source voltage limit when designing bias circuits. Verify that the application load conditions do not exceed the specified VSWR tolerance during Class-AB operation to maintain device longevity.

Part Context

The BLP15M9S30GZ belongs to the BLP15M9S30 series of power LDMOS transistors manufactured by Ampleon. This series is engineered for general-purpose RF power amplification tasks. The 'G' suffix typically denotes a specific package variant or environmental compliance level compared to the base model, while 'Z' indicates reel packaging. It serves as a core active element in broadband amplifier stages.

Replacement Considerations

Direct replacements must match the TO-270-2G-1 package outline and pinout configuration. Verify that substitute devices support the same 30 W output power and operate within the HF to 2 GHz bandwidth. Ensure equivalent thermal resistance and voltage ratings are maintained to preserve circuit stability and performance metrics.