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The BLP2425M10S250P is a dual N-channel LDMOS power transistor designed for high-power continuous wave applications in the 2400 MHz to 2500 MHz frequency range. It delivers 250 W output power with 15 dB gain and approximately 66.5% drain efficiency at VDS = 32 V. The device features a 65 V drain-source breakdown voltage, 95 mΩ on-state resistance, and a junction temperature rating up to 225 °C. Packaged in an overmolded plastic earless flanged OMP-780-4F-1 housing, it includes integrated ESD protection and internal matching for simplified broadband integration.
Verify component authenticity by cross-referencing the manufacturer's part number against official Ampleon documentation. Confirm that the ordering suffix matches the specified overmolded plastic package variant. Ensure handling procedures comply with ESD sensitivity classifications C1 and 1C as defined in the datasheet to prevent damage during assembly.
Select this component for designs requiring high power density within the 2.4 GHz ISM band. Evaluate thermal management requirements based on the 0.32 K/W junction-to-case thermal resistance. Verify that the application circuit supports the required 32 V drain supply and accounts for the maximum junction temperature limit of 225 °C under continuous operation conditions.
This device belongs to Ampleon's portfolio of LDMOS power transistors utilizing overmolded plastic technology. It is engineered specifically for broadband operations between 2400 MHz and 2500 MHz. The product line targets cost-sensitive yet high-performance applications where robustness and thermal stability are critical for long-term reliability in consumer and industrial sectors.
Consult official Ampleon substitution guides for verified alternatives. Do not assume functional equivalence with other LDMOS families without verifying pinout compatibility, thermal characteristics, and electrical parameters against the original specification sheet.