BLP5LA55SGXY

Overview

The BLP5LA55SG is a Power LDMOS transistor designed for land mobile radio applications supporting frequencies from HF up to 520 MHz. It operates at 13.6 V with typical output power of 55 W and drain efficiency exceeding 62%. The device features high power gain, excellent reliability, and extreme ruggedness rated at 65:1 VSWR. It includes integrated dual-sided ESD protection and RoHS compliance. Key electrical parameters include a drain-source breakdown voltage of 30 V, thermal resistance of 0.46 K/W, and input capacitance of 173.5 pF.

Feature Summary

• High efficiency and high power gain
• Extreme ruggedness with 65:1 VSWR tolerance
• Integrated dual-sided ESD protection
• Wideband operation capability

Applications

• TETRA, SSB and LTE mobile radio applications in VHF and UHF bands
• Wideband radio application, frequency range from 5 MHz to 30 MHz
• Wideband radio application, frequency range from 30 MHz to 512 MHz

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation before purchase. The XY suffix indicates reel packing with a minimum orderable quantity of 100 pieces. Confirm package type TO-270-2G-1 matches design requirements. Ensure ESD handling precautions are followed during assembly.

Selection Notes

Select this component for wideband LMR designs requiring robust performance up to 520 MHz. Consider the 13.6 V operating voltage and 55 W output power capabilities. Evaluate thermal management needs given the 0.46 K/W junction-to-case resistance. Verify compatibility with Class-AB biasing conditions for optimal linearity and efficiency.

Part Context

This part belongs to the Ampleon Power LDMOS transistor series optimized for land mobile radio. It complements other RF power devices by offering high ruggedness and broad frequency coverage. The technology supports modern digital and analog modulation schemes used in professional communication systems.

Replacement Considerations

BLP5LA55SGZ is an alternative version available in tray packaging.