BLP5LA55SGZ

Overview

The BLP5LA55SGZ is an LDMOS RF power transistor manufactured by Ampleon USA Inc. It operates within the VHF and UHF frequency bands, specifically covering 2 MHz to 941 MHz. The device provides a nominal output power of 55 W and delivers a gain exceeding 18 dB with drain efficiency greater than 65%. Designed for robust performance, it supports high VSWR loads and includes integrated ESD protection. The component is housed in a SOT1483-1 package, suitable for surface-mount applications in demanding radio environments.

Feature Summary

• High ruggedness capable of withstanding high VSWR loads
• Integrated dual-side ESD protection for enhanced reliability
• High power gain and drain efficiency reducing system complexity

Applications

• Ground mobile radio transceivers
• Public safety communication systems
• Commercial two-way radio infrastructure

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the SOT1483-1 package. Confirm RoHS compliance status through official documentation before integration into regulated supply chains.

Selection Notes

Select this component for applications requiring 55 W output in the VHF/UHF spectrum. Evaluate thermal management requirements based on the specified efficiency metrics. Compare against alternative models like the BLP9LA25S if lower power outputs suffice for the target design constraints.

Part Context

This part belongs to Ampleon's 12V LDMOS platform, leveraging ninth-generation technology. It complements other devices in the LA series designed for mobile radio applications. The product line emphasizes long-term availability with minimum production commitments.

Replacement Considerations

The BLP9LA25S serves as a lower-power alternative within the same family. Verify pinout compatibility and thermal characteristics when substituting with other LDMOS transistors from the BLP series.