BLP7G10S-160PY

Overview

The BLP7G10S-160P is a dual N-channel LDMOS power transistor designed for base station applications in the 600 MHz to 960 MHz frequency range. It delivers 160 W output power at 1 dB compression with a typical gain of 19.4 dB and drain efficiency of 59.7% at 860 MHz under pulsed class-AB operation (VDS = 28 V, IDq = 100 mA). The device features a maximum drain-source voltage of 65 V and a junction temperature rating up to 225 °C. Packaged in an HSOP4F (SOT1223-2) plastic heatsink small outline package, it integrates ESD protection and offers high ruggedness against load mismatches.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• High power gain and drain efficiency
• Excellent ruggedness against load mismatch
• Easy power control capability

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 600 MHz to 960 MHz range

Procurement Notes

Verify the specific ordering suffix matches the required packaging format, such as reel or cut tape, as indicated on the manufacturer's website. Confirm RoHS compliance status through official product details before procurement. Ensure all five pins are connected during installation to prevent device damage and ensure correct operation.

Selection Notes

Select this component for wideband base station designs requiring high linearity and power density within the 600 MHz to 960 MHz spectrum. Consider the thermal resistance of 0.5 K/W from junction to case when designing the heat sinking solution. Verify that the application environment supports the specified maximum junction temperature of 225 °C for optimal reliability.

Part Context

This part belongs to the Ampleon BLP7 series of LDMOS transistors, which are engineered for robust performance in wireless infrastructure. The HSOP4F package provides a compact form factor suitable for surface mount assembly while maintaining effective thermal dissipation characteristics essential for high-power RF applications.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, electrical parameters, and thermal specifications against the current datasheet.

FAQ

What is the maximum load mismatch the device can withstand?

The BLP7G10S-160P can withstand a load mismatch corresponding to a Voltage Standing Wave Ratio (VSWR) of 10:1 through all phases under rated load power conditions.

How is the gate-source threshold voltage defined?

The gate-source threshold voltage (VGS(th)) is typically 1.86 V, measured with a drain-source voltage of 10 V and a drain current of 90 mA.

What is the recommended test circuit substrate material?

The demo circuit information specifies using Taconic RF35 printed-circuit board material, which has a dielectric constant of 3.5 and a thickness of 0.76 mm.