BLP7G22-10Z

Overview

The BLP7G22-10 is a 10W plastic LDMOS power transistor designed for base station applications across frequencies from 700 MHz to 2700 MHz. It operates at VDS = 28 V and IDq = 110 mA, delivering typical drain efficiency of 25% and power gain of 17.4 dB under 2-carrier W-CDMA conditions at 2140 MHz. The device features a maximum drain-source voltage of 65 V and junction temperature of 150 °C. Packaged in the SOT1179-2 HVSON12 thermal enhanced very thin small outline package (6 x 4 x 0.85 mm), it includes integrated ESD protection and RoHS compliance.

Feature Summary

• High efficiency and excellent ruggedness with capability to withstand VSWR = 10:1 through all phases
• Designed for broadband operation with excellent thermal stability and high power gain
• Integrated ESD protection compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances

Applications

• CDMA
• W-CDMA
• GSM EDGE
• MC-GSM
• LTE
• WiMAX

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package version and tape-and-reel specifications. Ensure that the procurement channel provides original Ampleon components to guarantee authenticity. Confirm that the delivered units match the SOT1179-2 package outline dimensions and terminal configuration specified in the product data sheet.

Selection Notes

Select this component for single-ended driver applications requiring broadband performance between 700 MHz and 2700 MHz. Evaluate the thermal resistance from junction to case (3.2 K/W) against the expected power dissipation and case temperature constraints. Ensure the application circuit supports the recommended operating conditions, specifically the 28 V drain-source voltage and 110 mA quiescent current for optimal linearity and efficiency.

Part Context

This LDMOS driver transistor belongs to the Ampleon portfolio of radio frequency power devices intended for telecommunications infrastructure. It serves as a building block for multi-standard base station transmitters, supporting various cellular and wireless protocols. The device utilizes laterally diffused metal-oxide semiconductor technology to achieve high power density and reliability in compact packages suitable for modern RF front-end designs.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other LDMOS transistors without verifying pinout compatibility, electrical characteristics, and package dimensions.

FAQ

What is the maximum load mismatch the BLP7G22-10 can withstand?

The device can withstand a load mismatch corresponding to VSWR = 10:1 through all phases when operated at VDS = 28 V, IDq = 110 mA, PL = 10 W, and frequencies from 700 MHz to 2700 MHz.

Is the BLP7G22-10 suitable for automotive applications?

No, unless expressly stated otherwise in the data sheet, this product is not automotive qualified. It has not been tested according to automotive standards, and its use in automotive equipment is at the customer's own risk.

What package type does the BLP7G22-10 utilize?

It uses the HVSON12 plastic thermal enhanced very thin small outline package, designated as SOT1179-2, which has no leads and 12 terminals with body dimensions of 6 x 4 x 0.85 mm.