BLP8G10S-45PGJ

Overview

The BLP8G10S-45PG is a dual path, 45 W LDMOS power transistor designed for base station applications operating from 700 MHz to 1000 MHz. It features high efficiency, excellent ruggedness, and thermal stability with integrated ESD protection. The device supports broadband operation and offers high power gain. Typical RF performance at Tcase = 25 °C includes a drain efficiency of 19.8% and power gain of 20.8 dB under 2-carrier W-CDMA conditions. Limiting values specify a maximum drain-source voltage of 65 V and junction temperature of 225 °C.

Feature Summary

• Dual path LDMOS structure for base station deployment
• Broadband operational capability across 700 MHz to 1000 MHz
• Integrated electrostatic discharge (ESD) protection circuitry
• High thermal stability and robust load mismatch handling

Applications

• W-CDMA base stations
• LTE infrastructure
• GSM systems

Procurement Notes

Verify the specific package variant against design requirements. The BLP8G10S-45PG utilizes the SOT1224-4 plastic heatsink small outline package. Confirm that the ordering suffix aligns with the intended pin configuration and lead arrangement. Ensure compatibility with the required thermal management solution for the specified case temperature limits.

Selection Notes

Select this component for applications requiring high power output in the 700 MHz to 1000 MHz range. Consider the thermal resistance characteristics and the need for adequate heat sinking to maintain junction temperatures within safe limits. Evaluate the impedance matching network based on the provided typical impedance data for optimal efficiency and gain performance.

Part Context

This part belongs to the BLP8G10S series of power LDMOS transistors manufactured by Ampleon. It serves as a high-performance active element for radio frequency power amplification in telecommunications infrastructure. The 'G' suffix denotes the specific SOT1224-4 package variant, distinguishing it from other package options within the same electrical family.

Replacement Considerations

The datasheet lists BLP8G10S-45P as a related type number utilizing the SOT1223-4 package. Verify pinout compatibility and physical dimensions before substitution. No other direct substitutes are documented in the provided source material.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 65 V.

Does the device include built-in protection mechanisms?

Yes, the BLP8G10S-45PG features integrated electrostatic discharge (ESD) protection.

What is the maximum allowable junction temperature?

The maximum junction temperature (Tj) is specified as 225 °C.