BLP8G10S-45PJ

Overview

The BLP8G10S-45P is a dual path, 45 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1000 MHz. It features high efficiency, excellent ruggedness, and thermal stability with integrated ESD protection. Typical RF performance at VDS = 28 V, IDq = 224 mA, and Tcase = 25 °C includes a power gain of 20.8 dB, drain efficiency of 19.8%, and an adjacent channel power ratio of -49 dBc under 2-carrier W-CDMA conditions. The device withstands VSWR = 10:1 through all phases.

Feature Summary

• Dual path architecture for base station power amplification
• Integrated electrostatic discharge (ESD) protection
• High power gain and drain efficiency
• Excellent ruggedness against load mismatches

Applications

• W-CDMA base stations
• LTE base stations
• GSM base stations

Procurement Notes

Verify the specific package variant required for the design. The BLP8G10S-45P utilizes the SOT1223-4 plastic heatsink small outline package with four leads. Confirm that the sourcing channel provides original manufacturer documentation to ensure component authenticity and compliance with RoHS standards before finalizing procurement orders.

Selection Notes

Select this component for broadband operations spanning 700 MHz to 1000 MHz where high output power is critical. Ensure the application circuit supports Class-AB operation with appropriate biasing. Verify that the thermal management system can maintain the case temperature within specified limits to preserve reliability and prevent junction overheating during continuous use.

Part Context

This device belongs to the Ampleon LDMOS power transistor family, originally developed under NXP USA Inc. prior to the spin-off. It serves as a specialized semiconductor solution for telecommunications infrastructure, specifically targeting multi-standard base station power amplifiers requiring robust performance in demanding RF environments.

Replacement Considerations

The datasheet lists the BLP8G10S-45PG as a related part number utilizing the SOT1224-4 package. Designers must verify pinout compatibility and mechanical dimensions when substituting between these variants to ensure proper integration into existing board layouts.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 65 V.

How does the device handle load mismatches?

It is capable of withstanding a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 10:1 through all phases.

What is the thermal resistance from junction to case?

The typical thermal resistance from junction to case (Rth(j-case)) is 0.85 K/W.