BLP8G20S-80PY

BLP8G20S-80PY

  • Description:RF MOSFET LDMOS 28V 4HSOPF
  • Series:-

SKU:a848e788f3ef Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 4HSOPF
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.88GHz ~ 1.92GHz
  • Gain:17.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:10W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1223-1
  • Supplier Device Package:4-HSOPF
  • Configuration:Dual, Common Source

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BLP8G20S-80PY

Overview

The Ampleon BLP8G20S-80PY is an 80 W LDMOS transistor designed for base station applications operating between 1800 MHz and 2200 MHz. It features a drain-source voltage of 65 V, a junction temperature rating up to 225 °C, and a thermal resistance from junction to case of 0.85 K/W. The device provides typical power gain ranging from 16 dB to 17.5 dB and drain efficiency up to 47% under standard test conditions. Packaged in the HSOP4F (SOT1223-2) plastic heatsink small outline package with four flat leads, it includes integrated ESD protection and internal matching.

Feature Summary

  • Designed for broadband operation across the 1800 MHz to 2200 MHz frequency range
  • Features excellent ruggedness capable of withstanding load mismatch conditions
  • Includes internal matching networks to simplify circuit design and integration

Applications

  • RF power amplifiers for base station infrastructure
  • Multi-carrier applications within the 1800 MHz to 2200 MHz band

Procurement Notes

Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm the package variant matches the SOT1223-2 designation. Ensure handling procedures comply with electrostatic discharge standards due to the sensitivity of the semiconductor structure.

Selection Notes

Select this component for designs requiring high power output in the 1800 MHz to 2200 MHz spectrum. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the driving stage can support the required gate-source voltage levels for optimal performance.

Part Context

This part belongs to Ampleon's LDMOS portfolio, which targets RF power amplifier solutions for wireless communications. The BLP8G20S-80P utilizes advanced LDMOS technology to deliver high efficiency and power density suitable for modern cellular network infrastructure deployments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' devices without comprehensive electrical and mechanical testing.

BLP8G20S-80PYBLP8G20S-80PY

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