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The Ampleon BLP8G20S-80PY is an 80 W LDMOS transistor designed for base station applications operating between 1800 MHz and 2200 MHz. It features a drain-source voltage of 65 V, a junction temperature rating up to 225 °C, and a thermal resistance from junction to case of 0.85 K/W. The device provides typical power gain ranging from 16 dB to 17.5 dB and drain efficiency up to 47% under standard test conditions. Packaged in the HSOP4F (SOT1223-2) plastic heatsink small outline package with four flat leads, it includes integrated ESD protection and internal matching.
Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm the package variant matches the SOT1223-2 designation. Ensure handling procedures comply with electrostatic discharge standards due to the sensitivity of the semiconductor structure.
Select this component for designs requiring high power output in the 1800 MHz to 2200 MHz spectrum. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the driving stage can support the required gate-source voltage levels for optimal performance.
This part belongs to Ampleon's LDMOS portfolio, which targets RF power amplifier solutions for wireless communications. The BLP8G20S-80P utilizes advanced LDMOS technology to deliver high efficiency and power density suitable for modern cellular network infrastructure deployments.
Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' devices without comprehensive electrical and mechanical testing.