BLP9G0722-20Z

BLP9G0722-20Z

  • Description:RF MOSFET LDMOS 28V SOT1482-1
  • Series:-

SKU:baf60f220a52 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1482-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:400MHz ~ 2.7GHz
  • Gain:19dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:180 mA
  • Power - Output:43dBm
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1482-1
  • Supplier Device Package:SOT-1482-1
  • Configuration:-

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BLP9G0722-20Z

Overview

The BLP9G0722-20 is a 20 W plastic LDMOS power transistor designed for base station applications across frequencies from 100 MHz to 2700 MHz. It operates with a drain-source voltage of 65 V and delivers an output power of 35 dBm (approximately 3.16 W) at a typical power gain of 19 dB. The device achieves a drain efficiency of 22% under pulsed CW conditions at 1842.5 MHz. Key electrical parameters include a junction temperature limit of 225 °C, a thermal resistance from junction to case of 1.1 K/W, and a gate-source threshold voltage of 2.0 V.

Feature Summary

  • High efficiency and excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • Integrated ESD protection

Applications

  • FDD/TDD LTE
  • W-CDMA
  • GSM EDGE
  • MC-GSM
  • CDMA
  • WiMAX

Procurement Notes

Verify the specific package variant required for the design, as the BLP9G0722-20 corresponds to the SOT1482-1 outline while the BLP9G0722-20G uses the SOT1483-1 outline. Confirm that the ordering suffix accurately reflects the intended lead configuration before finalizing procurement orders to ensure mechanical compatibility with the target PCB layout.

Selection Notes

Select this component for wideband base station power amplifier designs requiring robust performance across multiple cellular standards. Ensure the application circuit provides adequate heatsinking to maintain the junction temperature below the 225 °C maximum rating. Verify that the load impedance matches the provided typical impedance data for optimal power gain and drain efficiency at the target operating frequency.

Part Context

This part belongs to Ampleon's portfolio of plastic LDMOS power transistors specifically engineered for telecommunications infrastructure. It serves as a high-performance active element in RF power amplifier modules, enabling efficient signal amplification for various mobile network generations. The device integrates advanced ruggedness features to withstand demanding operational environments typical of modern base station deployments.

Replacement Considerations

The BLP9G0722-20G is the direct functional equivalent with a different package outline (SOT1483-1). When substituting, verify that the new package fits the existing footprint or modify the PCB layout accordingly. Electrical characteristics remain consistent between the two variants.

BLP9G0722-20ZBLP9G0722-20Z

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