BLP9H10-30GZ

Overview

The BLP9H10-30G is a 30 W plastic LDMOS power transistor designed for base station applications operating between 616 MHz and 960 MHz. It features a drain-source voltage of 105 V, a junction temperature rating up to 225 °C, and an SOT1483-1 package. Typical performance at 806 MHz includes 32 dBm output power with 19.5 dB gain and 13.8% efficiency under 1-carrier W-CDMA conditions.

Feature Summary

• High efficiency and excellent ruggedness
• Designed for broadband operation
• Excellent thermal stability
• High power gain
• Integrated ESD protection

Applications

• FDD/TDD LTE
• W-CDMA
• GSM EDGE
• MC-GSM
• CDMA
• WiMAX

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm RoHS compliance status through official product details on the Ampleon website before finalizing procurement orders.

Selection Notes

Select this component for base station designs requiring operation within the 616 MHz to 960 MHz frequency range. Ensure the application circuit maintains the case temperature between -40 °C and +125 °C and respects the absolute maximum ratings to guarantee device reliability.

Part Context

This part belongs to the BLP9H10 series of plastic LDMOS power transistors manufactured by Ampleon. The series targets multi-standard base station amplifiers, offering a balance of high power density and robust performance across various wireless communication protocols.

Replacement Considerations

Consult the official Ampleon replacement guide or datasheet for verified equivalent parts. Do not substitute without confirming pinout compatibility, thermal resistance values, and electrical characteristics match the original design requirements.