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The BLP9H10S-500AWTY is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. It operates within a frequency range of 600 MHz to 960 MHz and delivers an output power of 500 W with a gain of 19 dB. The device features a drain-source breakdown voltage (Vds) of 48 V and a gate-source voltage range of -6 V to +11 V, with a threshold voltage of 2.5 V. On-resistance values are specified at 174 mOhms and 250 mOhms. It is housed in the OMP-780-6F-1-7 surface-mount package and supports operation temperatures from -40°C to +125°C.
Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm RoHS compliance status and moisture sensitivity level (MSL 3) prior to soldering. Ensure storage conditions adhere to humidity control standards to prevent package degradation before reflow assembly.
Select this component when designing circuits requiring 500 W output power within the 600-960 MHz spectrum. Verify that the system can accommodate the 48 V drain-source voltage rating and the specific thermal requirements of the OMP-780-6F-1-7 package. Ensure gate drive capabilities match the -6 V to +11 V operational window.
This part belongs to the Ampleon BLP9H series of high-power LDMOS transistors. It shares the OMP-780 family footprint but differs in electrical specifications such as voltage rating and frequency optimization compared to other variants like the BLP05H9S500PY. It is distinct from single-channel devices and lower-power RF MOSFETs.
Direct substitutes must match the 500 W output, 48 V Vds, and OMP-780-6F-1-7 package. Cross-reference with Ampleon's official replacement matrix for equivalent performance in the 600-960 MHz band.