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The Ampleon BLP9H10S-850AVTZ is a dual N-channel LDMOS RF power transistor designed for high-efficiency applications in the UHF band. It operates within a frequency range of 617 MHz to 960 MHz and delivers an output power of 850 W with a gain of 17.8 dB. The device features a drain-source breakdown voltage (Vds) of 50 V and on-resistance values of 107 mOhms and 155 mOhms. It supports gate-source voltages from -6 V to +11 V, with a threshold voltage of 2.5 V. Housed in the OMP-1230-6F-1-7 surface-mount package, it functions reliably between -40°C and +125°C.
Verify component authenticity through authorized Ampleon distribution channels or certified distributors. Confirm RoHS compliance status via official datasheets prior to integration. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate package integrity against the specified OMP-1230-6F-1-7 standard before assembly.
Select this component for designs requiring 850 W output power at UHF frequencies. Compare Rds(on) variations of 107 mOhms and 155 mOhms against circuit requirements. Ensure thermal management solutions support the -40°C to +125°C operating range. Verify compatibility with the OMP-1230-6F-1-7 footprint during PCB layout.
This part belongs to the Ampleon BLP9H10S series of LDMOS transistors. It shares the dual N-channel topology with variants like the BLP9H10S-500AWTY but differs in output power ratings and packaging. The series targets high-power UHF applications, offering scalability across different wattage classes while maintaining consistent interface characteristics.
Direct substitutes include the BLP9H10S-500AWTY for lower power requirements. Cross-reference pinouts and thermal resistance values when considering alternative packages. Verify that any replacement maintains the 50 V Vds rating and compatible gate voltage specifications.