BLS2731-50,114

BLS2731-50,114

  • Description:RF TRANS NPN 75V 3.1GHZ CDFM2
  • Series:-

SKU:767ea165da0a Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 75V 3.1GHZ CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):75V
  • Frequency - Transition:3.1GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:9dB
  • Power - Max:80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 1.5A, 5V
  • Current - Collector (Ic) (Max):6A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-422A
  • Supplier Device Package:CDFM2
  • Grade:-
  • Qualification:-

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BLS2731-50,114

Overview

The BLS2731-50,114 is a microwave power transistor manufactured by Ampleon USA Inc. It is an NPN device designed for short and medium pulse applications. Key electrical parameters include a maximum collector current of 6 A, a minimum DC current gain (hFE) of 25, and a maximum power dissipation of 180 W. The component supports surface mount installation and operates at temperatures up to 200 °C.

Feature Summary

  • Internal input and output matching networks facilitate simplified circuit design
  • Emitter ballasting resistors enhance device ruggedness
  • Gold metallization ensures excellent reliability
  • Interdigitated emitter-base structure provides high emitter efficiency
  • Multicell geometry improves power sharing and reduces thermal resistance

Applications

  • Short pulse microwave systems
  • Medium pulse microwave systems

Procurement Notes

Verify the manufacturer designation as Ampleon USA Inc. or Philips Semiconductors/NXP Semiconductors due to historical corporate transitions. Confirm the suffix 114 corresponds to the specific reel or tape packaging configuration required for automated assembly processes. Ensure compatibility with RoHS directives if applicable to the production environment.

Selection Notes

Select this component for designs requiring integrated matching networks to reduce external passive components. Evaluate the 180 W power dissipation capability against thermal management constraints. Consider the 200 °C maximum operating temperature for high-reliability environments. Verify that the 6 A collector current meets the peak load requirements of the target application.

Part Context

This part belongs to the BLS series of microwave power transistors. It represents a legacy product line originally specified by Philips Semiconductors in 1998. The technology utilizes gold metallization and multicell geometry typical of high-frequency power devices from that era. It serves as a discrete semiconductor solution for RF power amplification.

Replacement Considerations

Consult official Ampleon or NXP documentation for direct cross-reference part numbers. Verify pinout compatibility and thermal resistance values before substituting with other microwave transistors.

BLS2731-50,114BLS2731-50,114

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