BLS6G2731S-130,112

BLS6G2731S-130,112

$397.24
  • Description:RF MOSFET LDMOS 32V CDFM2
  • Series:-

SKU:36f1bf984f0d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.7GHz ~ 3.1GHz
  • Gain:12dB
  • Voltage - Test:32 V
  • Current Rating (Amps):33A
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:130W
  • Voltage - Rated:60 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-922-1
  • Supplier Device Package:CDFM2
  • Configuration:-

Download product information

BLS6G2731S-130,112

Overview

The BLS6G2731S-130 is a 130 W LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 3.1 GHz. It delivers an output power of 130 W with a typical power gain of 12 dB and drain efficiency of 50% at a supply voltage of 32 V. The device features a 60 V drain-source breakdown voltage, a maximum junction temperature of 200 °C, and operates in enhancement mode. Packaged in the ceramic earless flanged cavity SOT922-1 format, it includes integrated ESD protection and internal matching to facilitate broadband implementation.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness

Applications

  • S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package version and compliance status. Ensure that the procurement channel provides valid traceability for this RF component. Confirm RoHS Directive 2002/95/EC compliance through the manufacturer's current product status records before finalizing acquisition.

Selection Notes

Select this component for pulsed RF radar systems requiring high efficiency and ruggedness within the specified S-band frequency range. Evaluate thermal impedance characteristics relative to the intended duty cycle and pulse width. Verify that the application circuit supports the required class-AB operation parameters and load mismatch conditions defined in the datasheet.

Part Context

This part belongs to the BLS6G series of LDMOS transistors from Ampleon, specifically engineered for high-power S-band radar transmitter modules. It represents a specialized solution for broadband radar applications where high linearity and thermal stability are critical requirements for system performance.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference electrical parameters such as output power, frequency range, and package dimensions to ensure compatibility with existing amplifier designs without redesigning the matching network.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated at 200 °C.

Does the device include internal matching?

Yes, the BLS6G2731S-130 is internally matched for ease of use.

What is the typical drain efficiency at 130 W output?

The typical drain efficiency is 50% when delivering 130 W of output power.

BLS6G2731S-130,112BLS6G2731S-130,112
$397.24
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