BLS6G2933P-200,117

Description：RF MOSFET LDMOS 32V SOM038
Series：-

SKU:ac87d1d7c0a1 Category: RF FETs, MOSFETs Brand: Ampleon USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 32V SOM038
Series：-
Mfr：Ampleon USA Inc.
Package：Tube
Technology：LDMOS
Frequency：2.9GHz ~ 3.3GHz
Gain：11dB
Voltage - Test：32 V
Current Rating (Amps)：66A
Noise Figure：-
Current - Test：100 mA
Power - Output：215W
Voltage - Rated：60 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：SOM038
Supplier Device Package：SOM038
Configuration：-

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BLS6G2933P-200,117

Overview

The BLS6G2933P-200 is a 200 W LDMOS amplifier pallet designed for radar applications in the 2.9 GHz to 3.3 GHz range. It operates at a drain-source voltage of 32 V, delivering 220 W output power with 11 dB gain and 45% drain efficiency in class-AB mode. The device features integrated ESD protection, excellent ruggedness, and thermal stability. Input and output impedances are matched to 50 Ω. It withstands a load mismatch of VSWR = 5:1 under specified pulsed conditions.

Feature Summary

Integrated electrostatic discharge (ESD) protection
Excellent ruggedness against load mismatches
Designed for broadband operation across S-Band frequencies
Matched to 50 Ω input and output impedances

Applications

General S-Band radar applications

Procurement Notes

Verify the component status as an objective data sheet indicates development stage information. Confirm that the product is not automotive qualified unless explicitly stated in updated documentation. Ensure handling procedures account for ESD sensitivity during transport and installation to prevent damage to the sensitive semiconductor junctions.

Selection Notes

Select this component for high-power S-Band radar systems requiring robust performance under varying load conditions. Verify that the application supports the required 32 V supply and manages the thermal impedance from junction to heatsink effectively. Ensure the design accommodates the specific pulse duration and duty cycle parameters defined in the operational characteristics.

Part Context

This LDMOS pallet amplifier belongs to the NXP Semiconductors portfolio of RF power devices. It utilizes Laterally Diffused Metal Oxide Semiconductor technology optimized for high power density. The device is manufactured by NXP Semiconductors, which may have been acquired or associated with Ampleon USA Inc. in certain contexts, though the datasheet credits NXP.