BLS6G2933S-130,112

Overview

The BLS6G2933S-130 is a 130 W LDMOS power transistor designed for S-band radar applications operating between 2.9 GHz and 3.3 GHz. It delivers an output power of 130 W with a typical power gain of 12.5 dB and drain efficiency of 47% at a supply voltage of 32 V. The device features integrated ESD protection, high ruggedness capable of withstanding a VSWR of 5:1, and excellent thermal stability. It utilizes a ceramic earless flanged cavity package (SOT922-1) with the drain connected to the flange.

Feature Summary

• Internally matched for ease of use
• High flexibility with respect to pulse formats
• Excellent ruggedness under load mismatch conditions

Applications

• S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency range

Procurement Notes

Verify the component against the official Ampleon datasheet Rev. 4 dated 1 September 2015. Confirm the part number matches BLS6G2933S-130 and the package type is SOT922-1. Ensure the device meets the required electrical specifications for your specific radar application design.

Selection Notes

Select this component for pulsed RF radar systems requiring 130 W output power within the 2.9 GHz to 3.3 GHz band. Consider the 32 V supply requirement and the need for a mounting base compatible with the ceramic earless flanged cavity package. Verify thermal management capabilities to maintain junction temperature within limits during operation.

Part Context

This LDMOS transistor belongs to the Ampleon S-band radar power transistor family. It is specifically engineered for broadband operation across the 2.9 GHz to 3.3 GHz range. The device integrates internal matching networks to simplify circuit design and includes built-in electrostatic discharge protection for enhanced reliability.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.