BLS6G3135-20,112

BLS6G3135-20,112

  • Description:RF MOSFET LDMOS 32V CDFM2
  • Series:-

SKU:a27846a3fa9d Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:3.1GHz ~ 3.5GHz
  • Gain:15.5dB
  • Voltage - Test:32 V
  • Current Rating (Amps):2.1A
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:20W
  • Voltage - Rated:60 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-608A
  • Supplier Device Package:CDFM2
  • Configuration:-

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BLS6G3135-20,112

Overview

The BLS6G3135-20 is a 20 W LDMOS power transistor designed for S-Band radar applications operating between 3.1 GHz and 3.5 GHz. It features an internally matched design for ease of use and includes integrated ESD protection. Typical pulsed RF performance at 3.1–3.5 GHz, 32 V supply, 50 mA quiescent current, 300 µs pulse width, and 10% duty cycle yields 20 W output power, 15.5 dB gain, and 45% efficiency. The device operates in Class AB with excellent thermal stability and ruggedness, capable of withstanding a VSWR of 5:1 through all phases.

Feature Summary

  • Internally matched for simplified circuit integration
  • Integrated electrostatic discharge (ESD) protection
  • High efficiency and excellent thermal stability
  • Robust operation under load mismatch conditions

Applications

  • S-Band power amplifiers for radar systems

Procurement Notes

Verify the specific package variant required for the design, as the BLS6G3135-20 corresponds to the flanged ceramic SOT608A package, while the BLS6G3135S-20 uses the earless flanged SOT608B package. Confirm RoHS compliance status and ensure handling procedures account for the device's sensitivity to electrostatic discharge during transport and assembly.

Selection Notes

Select this component for broadband S-Band radar transmitter designs requiring 20 W output power. Ensure the thermal management system can maintain the case temperature within specified limits given the junction-to-case thermal resistance values. Verify that the driving circuitry supports the required gate-source voltage thresholds and biasing conditions for Class AB pulsed operation.

Part Context

This part belongs to Ampleon’s portfolio of LDMOS power transistors optimized for radar frequencies. It serves as a solid-state replacement for older vacuum tube technologies in S-Band radar systems, offering improved reliability and lower maintenance costs compared to traditional klystrons or magnetrons used in similar frequency ranges.

Replacement Considerations

The BLS6G3135S-20 is a direct alternative with identical electrical characteristics but utilizes the SOT608B earless flanged package instead of the SOT608A flanged package. Designers must verify mechanical mounting constraints before substituting between these two variants.

BLS6G3135-20,112BLS6G3135-20,112

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