BLS6G3135S-120,112

BLS6G3135S-120,112

  • Description:RF MOSFET LDMOS 32V SOT502B
  • Series:-

SKU:662a96f4db61 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:3.1GHz ~ 3.5GHz
  • Gain:11dB
  • Voltage - Test:32 V
  • Current Rating (Amps):7.2A
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:120W
  • Voltage - Rated:60 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

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BLS6G3135S-120,112

Overview

The BLS6G3135S-120 is an LDMOS power transistor designed for S-Band radar applications within the 3.1 GHz to 3.5 GHz frequency range. It delivers a typical output power of 120 W with a gain of 11 dB and drain efficiency of 43% under pulsed RF conditions (tp = 300 µs, duty cycle = 10%, IDq = 100 mA) at a supply voltage of 32 V. The device features a maximum drain-source breakdown voltage of 60 V and a junction temperature rating up to 225 °C. It utilizes an earless flanged ceramic package (SOT502B) with two leads.

Feature Summary

  • Internally matched for ease of use
  • Excellent ruggedness capable of withstanding VSWR = 5:1 through all phases
  • Integrated ESD protection
  • High thermal stability

Applications

  • S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm the package variant. The 'S' designation indicates the earless flanged ceramic package (SOT502B). Ensure that procurement channels provide original manufacturer data sheets to validate RoHS compliance and absolute maximum ratings before integration into production designs.

Selection Notes

Select this component for high-power radar transmitter modules requiring robust performance in the S-Band spectrum. The internal matching network simplifies circuit design compared to unmatched devices. Consider the thermal impedance characteristics when designing heat sinks, as the device operates effectively at high junction temperatures up to 225 °C during pulsed operation.

Part Context

This part belongs to the BLS6G series of LDMOS transistors from Ampleon, specifically engineered for broadband radar operations. It shares architectural similarities with the flanged BLS6G3135-120 but differs in mechanical mounting configuration. The series is characterized by high efficiency and ruggedness suitable for demanding military and aerospace radar environments.

Replacement Considerations

The BLS6G3135-120 serves as the primary functional equivalent, differing only in the mechanical package type (flanged with mounting holes versus earless flanged). Verify pinout compatibility and physical footprint constraints before substitution.

BLS6G3135S-120,112BLS6G3135S-120,112

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