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The BLS6G3135S-120 is an LDMOS power transistor designed for S-Band radar applications within the 3.1 GHz to 3.5 GHz frequency range. It delivers a typical output power of 120 W with a gain of 11 dB and drain efficiency of 43% under pulsed RF conditions (tp = 300 µs, duty cycle = 10%, IDq = 100 mA) at a supply voltage of 32 V. The device features a maximum drain-source breakdown voltage of 60 V and a junction temperature rating up to 225 °C. It utilizes an earless flanged ceramic package (SOT502B) with two leads.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm the package variant. The 'S' designation indicates the earless flanged ceramic package (SOT502B). Ensure that procurement channels provide original manufacturer data sheets to validate RoHS compliance and absolute maximum ratings before integration into production designs.
Select this component for high-power radar transmitter modules requiring robust performance in the S-Band spectrum. The internal matching network simplifies circuit design compared to unmatched devices. Consider the thermal impedance characteristics when designing heat sinks, as the device operates effectively at high junction temperatures up to 225 °C during pulsed operation.
This part belongs to the BLS6G series of LDMOS transistors from Ampleon, specifically engineered for broadband radar operations. It shares architectural similarities with the flanged BLS6G3135-120 but differs in mechanical mounting configuration. The series is characterized by high efficiency and ruggedness suitable for demanding military and aerospace radar environments.
The BLS6G3135-120 serves as the primary functional equivalent, differing only in the mechanical package type (flanged with mounting holes versus earless flanged). Verify pinout compatibility and physical footprint constraints before substitution.