BLS6G3135S-20,112

Overview

The BLS6G3135S-20,112 is an LDMOS power transistor designed for S-band radar applications within the 3.1 GHz to 3.5 GHz frequency range. It delivers a typical output power of 20 W with a power gain of 15.5 dB and drain efficiency of 45% under pulsed RF conditions (VDS = 32 V, IDq = 50 mA, tp = 300 µs, duty cycle = 10%). The device features a ceramic earless flanged package (SOT608B) with two leads and includes integrated ESD protection. Key electrical limits include a drain-source voltage of 60 V, gate-source voltage of +13 V, and maximum junction temperature of 225 °C.

Feature Summary

• Internally matched for ease of use
• Excellent ruggedness capable of withstanding VSWR = 5:1 through all phases
• High efficiency and excellent thermal stability
• Integrated ESD protection

Applications

• S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm that the required component matches the intended application parameters and environmental constraints before finalizing procurement orders.

Selection Notes

Select this component for S-band radar systems requiring high power density and broadband operation between 3.1 GHz and 3.5 GHz. Ensure the design accommodates the specified thermal resistance and pulse width requirements to maintain optimal performance and reliability during operation.

Part Context

This part belongs to the BLS6G3135 series of LDMOS transistors manufactured by Ampleon. The 'S' designation indicates the SOT608B ceramic earless flanged package variant, distinct from the standard flanged package version. These devices are engineered specifically for robust performance in demanding radar amplifier environments.

Replacement Considerations

The BLS6G3135-20 serves as a direct functional equivalent within the same product family, differing primarily in its SOT608A flanged package configuration rather than electrical characteristics.