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The BLS7G2729L-350P is a 350 W LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 2.9 GHz. It features an internally matched balanced ceramic package (SOT539A) with two mounting holes and four leads. Key electrical parameters include a drain-source voltage of 65 V, a maximum junction temperature of 225 °C, and a typical drain efficiency of 50% at 350 W output power. The device provides a power gain of 13 dB and exhibits excellent ruggedness, supporting load mismatches up to 10:1 VSWR.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm that the component meets RoHS compliance requirements as specified in the product data sheet. Ensure proper handling precautions are observed due to electrostatic discharge sensitivity.
Select this component for high-power S-band radar systems requiring robust performance within the 2.7 GHz to 2.9 GHz band. Consider the internal matching network which simplifies circuit design. Evaluate thermal management capabilities given the 225 °C maximum junction temperature rating and transient thermal impedance characteristics.
This part belongs to the BLS7G series of LDMOS power transistors from Ampleon. It is specifically engineered for radar transmitter modules where high power density and reliability are critical. The device represents a mature technology platform optimized for pulsed RF operations in defense and aerospace communication systems.
BLS7G2729LS-350P is the earless flanged variant (SOT539B). Verify mechanical mounting constraints before substitution.
The device can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified pulsed conditions.
The BLS7G2729L-350P uses the SOT539A package, which is a flanged balanced ceramic package with two mounting holes and four leads.