BLS7G2730LS-200PU

Overview

The BLS7G2730LS-200PU is an LDMOS power transistor designed for S-band radar applications operating between 2700 MHz and 3000 MHz. It delivers a typical output power of 200 W in production test circuits and up to 220 W in application circuits at VDS = 32 V. The device features a drain-source breakdown voltage (V(BR)DSS) of 65 V, a gate-source threshold voltage (VGS(th)) ranging from 1.5 V to 2.3 V, and a maximum junction temperature of 225 °C. It utilizes the SOT539B earless flanged balanced ceramic package with four leads.

Feature Summary

• High efficiency and excellent ruggedness suitable for demanding radar environments
• Designed for broadband operation with high flexibility regarding pulse formats
• Internally matched for ease of use and integrated ESD protection
• Excellent thermal stability compliant with RoHS directives

Applications

• S-band radar systems operating within the 2700 MHz to 3000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm that the component meets all environmental compliance requirements relevant to your deployment region. Cross-reference the datasheet revision history to ensure access to the most current product specifications and handling guidelines before initiating procurement processes.

Selection Notes

Select this component for S-band radar designs requiring robust performance in Class-AB pulsed RF modes. Ensure the design accommodates the specified 32 V drain supply and manages thermal impedance effectively given the 225 °C junction limit. Verify that the system can handle the required pulse widths and duty cycles while maintaining the necessary load mismatch tolerance for reliable operation.

Part Context

This part belongs to the BLS7G2730L(S)-200P series of LDMOS power transistors manufactured by Ampleon. The 'LS' variant specifically denotes the SOT539B earless flanged balanced ceramic package, distinguishing it from the standard flanged version. This series is engineered to provide high power density and reliability for specialized microwave radar infrastructure.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Do not assume functional equivalence with other LDMOS devices without verifying pinout compatibility, impedance matching networks, and absolute maximum ratings.