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The BLS7G3135L-350P is a 350 W LDMOS power transistor designed for radar applications in the 3.1 GHz to 3.5 GHz range. It features an internally matched balanced ceramic package (SOT539A) with two mounting holes and four leads. The device operates at a drain-source voltage of 65 V, delivering 350 W output power with 12 dB gain and 43% drain efficiency at 3.1 GHz and 3.3 GHz. At 3.5 GHz, it provides 320 W output with 10 dB gain and 39% efficiency. Key electrical parameters include a junction temperature limit of 225 °C, gate-source threshold voltage of 1.9 V typ, and on-state resistance of 0.065 Ω.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package variant selection. Confirm that the component status remains active for production use. Cross-reference the datasheet revision history to ensure all technical specifications align with the latest published data before finalizing procurement orders.
Select this component for S-band radar systems requiring high power output within the 3.1 GHz to 3.5 GHz band. Ensure the design accommodates the flanged SOT539A package dimensions and mounting hole pitch. Verify thermal management capabilities to maintain junction temperatures below the 225 °C maximum limit during pulsed operation.
This part belongs to the Ampleon BLS7G series of LDMOS power transistors. It is specifically engineered for broadband operation in the S-band spectrum. The device is distinct from the LS variant by its inclusion of mounting holes in the SOT539A package, facilitating secure mechanical attachment in radar amplifier assemblies.
The BLS7G3135LS-350P is a related variant featuring an earless flanged balanced ceramic package (SOT539B). Substitution requires verification of mechanical fit due to the absence of mounting holes in the LS version.