BLS7G3135L-350P,11

BLS7G3135L-350P,11

$729.30
  • Description:RF FET LDMOS 65V 10DB SOT539A
  • Series:-

SKU:3585465f2897 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF FET LDMOS 65V 10DB SOT539A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:3.5GHz
  • Gain:10dB
  • Voltage - Test:32 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:320W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-539A
  • Supplier Device Package:SOT539A
  • Configuration:Dual, Common Source

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BLS7G3135L-350P,11

Overview

The BLS7G3135L-350P is a 350 W LDMOS power transistor designed for radar applications in the 3.1 GHz to 3.5 GHz range. It features an internally matched balanced ceramic package (SOT539A) with two mounting holes and four leads. The device operates at a drain-source voltage of 65 V, delivering 350 W output power with 12 dB gain and 43% drain efficiency at 3.1 GHz and 3.3 GHz. At 3.5 GHz, it provides 320 W output with 10 dB gain and 39% efficiency. Key electrical parameters include a junction temperature limit of 225 °C, gate-source threshold voltage of 1.9 V typ, and on-state resistance of 0.065 Ω.

Feature Summary

  • Internally matched for ease of use
  • High flexibility with respect to pulse formats
  • Excellent ruggedness under load mismatch conditions
  • Compliant with RoHS Directive 2002/95/EC

Applications

  • S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package variant selection. Confirm that the component status remains active for production use. Cross-reference the datasheet revision history to ensure all technical specifications align with the latest published data before finalizing procurement orders.

Selection Notes

Select this component for S-band radar systems requiring high power output within the 3.1 GHz to 3.5 GHz band. Ensure the design accommodates the flanged SOT539A package dimensions and mounting hole pitch. Verify thermal management capabilities to maintain junction temperatures below the 225 °C maximum limit during pulsed operation.

Part Context

This part belongs to the Ampleon BLS7G series of LDMOS power transistors. It is specifically engineered for broadband operation in the S-band spectrum. The device is distinct from the LS variant by its inclusion of mounting holes in the SOT539A package, facilitating secure mechanical attachment in radar amplifier assemblies.

Replacement Considerations

The BLS7G3135LS-350P is a related variant featuring an earless flanged balanced ceramic package (SOT539B). Substitution requires verification of mechanical fit due to the absence of mounting holes in the LS version.

BLS7G3135L-350P,11BLS7G3135L-350P,11
$729.30
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