BLS8G2731L-400PU

Overview

The BLS8G2731L-400PU is an LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 3.1 GHz. It delivers a typical output power of 530 W at 1 dB gain compression across the full frequency range, with a drain efficiency of 45%. At 3.1 GHz specifically, it provides 400 W output power with 47% efficiency. The device features a 65 V drain-source voltage rating, 225 °C maximum junction temperature, and integrated dual-sided ESD protection. It utilizes a balanced ceramic package (SOT539A) with four leads.

Feature Summary

• High efficiency and excellent thermal stability
• Excellent ruggedness capable of withstanding high VSWR
• Integrated dual-sided ESD protection for off-state isolation
• Internally matched for ease of use

Applications

• S-band radar systems in the 2.7 GHz to 3.1 GHz range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variations. The 'U' suffix may indicate specific packaging or handling requirements distinct from standard listings. Confirm RoHS compliance status and ensure compatibility with the intended mounting hardware for the flanged ceramic package before finalizing procurement orders.

Selection Notes

Select this component for pulsed RF applications requiring high power density in the S-band spectrum. Ensure the design accommodates the 32 V drain supply and 200 mA quiescent current specified for optimal performance. Verify that the thermal management system can handle the transient thermal impedance values provided in the datasheet to maintain reliability under peak load conditions.

Part Context

This part belongs to the BLS8G2731L(S)-400P family of LDMOS transistors manufactured by Ampleon. It shares core electrical characteristics with the BLS8G2731LS-400P variant, differing primarily in the physical package configuration. The family is engineered for robust operation in demanding radar environments.

Replacement Considerations

BLS8G2731LS-400P