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The BLS9G2729L-350U is a 350 W LDMOS power transistor designed for S-band applications operating between 2.7 GHz and 2.9 GHz. It features an internally matched single-ended architecture housed in a flanged ceramic package (SOT502A). Typical RF performance at VDS = 28 V, IDq = 400 mA, and Tcase = 25 °C includes a power gain of 14 dB, drain efficiency of 50%, and output power of 320 W. The device supports pulsed operation with a maximum junction temperature of 225 °C and withstands load mismatches up to VSWR = 10:1.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variations. Ensure compatibility with required mounting hardware for the flanged ceramic enclosure. Confirm RoHS compliance status if environmental regulations apply to the final assembly. Validate that the procurement channel provides authentic manufacturer-direct or authorized distribution channels.
Select this component for S-band radar designs requiring high power density and internal matching. Evaluate thermal management requirements based on the specified transient thermal impedance values. Consider the 28 V supply voltage constraint when designing the bias network. Verify that the application operates within the 2.7 GHz to 2.9 GHz frequency range for optimal performance metrics.
This part belongs to the BLS9G27xx series of LDMOS power transistors from Ampleon. It shares architectural similarities with other S-band devices but is distinguished by its specific 350 W power rating and internal matching configuration. The 'L' suffix denotes the flanged package variant with mounting holes, differentiating it from earless versions.
The datasheet lists BLS9G2729LS-350 as a related variant featuring an earless flanged ceramic package (SOT502B). Substitution requires verification of mechanical footprint differences and mounting hole alignment. Electrical characteristics remain comparable, but PCB layout must accommodate the distinct package outline.