BLS9G2731LS-400

BLS9G2731LS-400

  • Description:RF MOSFET LDMOS 32V SOT502B
  • Series:-

SKU:686f01617b8d Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.7GHz ~ 3.1GHz
  • Gain:13dB
  • Voltage - Test:32 V
  • Current Rating (Amps):4µA
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:400W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

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BLS9G2731LS-400

Overview

The Ampleon BLS9G2731LS-400 is a 400 W LDMOS power transistor designed for S-band applications operating between 2700 MHz and 3100 MHz. It features an internally matched design to simplify integration into RF circuits. Typical performance at VDS = 32 V, IDq = 400 mA, and Tcase = 25 °C includes a drain efficiency of 47%, a power gain of 13 dB, and an output power of 425 W under pulsed conditions (tp = 300 µs, duty cycle = 10%). The device utilizes a flanged ceramic package without leads (SOT502B) with the drain connected to the flange.

Feature Summary

  • Internally matched for ease of use
  • Integrated dual-sided ESD protection enables excellent off-state isolation
  • High flexibility regarding pulse formats
  • Excellent thermal stability and ruggedness

Applications

  • S-band radar systems in the 2700 MHz to 3100 MHz frequency range

Procurement Notes

Verify the specific ordering suffix 'LS' corresponds to the earless flanged ceramic package (SOT502B). Confirm that the component meets RoHS Directive 2002/95/EC requirements if environmental compliance is mandatory for the assembly process. Ensure handling procedures account for the specified ESD sensitivity classifications.

Selection Notes

Select this component for high-power S-band radar transmitters requiring robust load mismatch tolerance. The internal matching network reduces external circuit complexity compared to unmatched variants. Verify that the application supports the required pulsed operation parameters, specifically the 300 µs pulse width and 10% duty cycle, to maintain optimal thermal and electrical performance.

Part Context

This part belongs to the BLS9G27xx series of LDMOS power transistors from Ampleon. It shares similar architectural characteristics with other models in the family but is optimized for the 2700 MHz to 3100 MHz band. The 'LS' designation distinguishes it from the standard flanged version by omitting mounting holes on the ceramic body.

Replacement Considerations

The BLS9G2731L-400 serves as a direct functional substitute, differing only in the presence of mounting holes on the SOT502A package. Cross-referencing with other 400 W S-band devices requires verification of impedance matching and pinout compatibility.

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified pulsed operating conditions.

How does the LS variant differ from the standard L variant?

The BLS9G2731LS-400 uses the SOT502B package, which is an earless flanged ceramic package, whereas the standard variant uses the SOT502A package with two mounting holes.

What are the ESD sensitivity ratings for this component?

The component has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.

BLS9G2731LS-400BLS9G2731LS-400

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