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The BLS9G2735L-50U is a single-ended LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 3.5 GHz. It delivers a typical output power of 45 W at the 1 dB gain compression point, with a power gain of 12 dB and drain efficiency of 48%. The device operates at a drain-source voltage of 32 V and features a flanged ceramic package (SOT1135A) with two mounting holes. Key electrical limits include a maximum drain-source voltage of 65 V and a junction temperature rating up to 225 °C.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variations. Ensure that any additional characters do not alter the functional specifications or pinout configuration. Confirm RoHS compliance status through current manufacturer declarations before finalizing procurement orders.
Select this component for S-band radar designs requiring high efficiency and ruggedness. Verify impedance matching networks using the provided ZS and ZL data points across the 2.9 GHz to 3.4 GHz band. Ensure thermal management solutions accommodate the transient thermal impedance characteristics under specified pulsed conditions.
This part belongs to the BLS9G series of LDMOS transistors from Ampleon. It shares architectural similarities with the BLS9G2735LS-50 but utilizes the SOT1135A flanged package instead of the earless SOT1135B variant. Both variants target identical S-band radar performance metrics within the same frequency spectrum.
The BLS9G2735LS-50 serves as a direct functional alternative, differing primarily in the SOT1135B earless flanged package. Substitution requires verification of mechanical mounting constraints and PCB layout compatibility due to the distinct package outlines.