SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLS9G2934LS-400U is a single-ended LDMOS power transistor designed for S-band radar applications operating between 2.9 GHz and 3.4 GHz. It delivers 400 W output power with 11 dB gain and 43% drain efficiency at VDS = 32 V. The device features a 65 V drain-source breakdown voltage, 60 mΩ on-state resistance, and a maximum junction temperature of +225 °C. Packaged in the SOT502B earless flanged ceramic format, it includes integrated dual-sided ESD protection and internal matching to simplify circuit integration.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm that the component meets RoHS compliance requirements relevant to your region. Check for any export control regulations or licensing restrictions applicable to this RF power device before finalizing procurement orders.
Select this component for high-power S-band radar systems requiring robust performance within the 2.9 GHz to 3.4 GHz band. Ensure the design accommodates the specified 65 V drain-source voltage limit and manages heat dissipation to maintain junction temperatures below 225 °C. Verify impedance matching networks align with the provided typical impedance data for optimal power transfer.
This part belongs to the BLS9G2934L(S)-400 series of LDMOS transistors manufactured by Ampleon. The 'LS' designation indicates the SOT502B earless flanged ceramic package variant, distinct from the standard flanged version. These devices are engineered specifically for demanding radar environments where high ruggedness and efficiency are critical operational parameters.
The BLS9G2934L-400 serves as the primary alternative within the same product family, differing only in package style (SOT502A vs SOT502B). No other cross-model substitutes are documented in the official datasheet.