BLS9G2934LS-400U

BLS9G2934LS-400U

$182.86
  • Description:RF MOSFET LDMOS 32V SOT502B
  • Series:-

SKU:76bcaf3ccb1c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.9GHz ~ 3.4GHz
  • Gain:12dB
  • Voltage - Test:32 V
  • Current Rating (Amps):4µA
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:400W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

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BLS9G2934LS-400U

Overview

The BLS9G2934LS-400U is a single-ended LDMOS power transistor designed for S-band radar applications operating between 2.9 GHz and 3.4 GHz. It delivers 400 W output power with 11 dB gain and 43% drain efficiency at VDS = 32 V. The device features a 65 V drain-source breakdown voltage, 60 mΩ on-state resistance, and a maximum junction temperature of +225 °C. Packaged in the SOT502B earless flanged ceramic format, it includes integrated dual-sided ESD protection and internal matching to simplify circuit integration.

Feature Summary

  • Internally matched for ease of use
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Excellent thermal stability

Applications

  • S-band radar applications in the frequency range 2.9 GHz to 3.4 GHz

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm that the component meets RoHS compliance requirements relevant to your region. Check for any export control regulations or licensing restrictions applicable to this RF power device before finalizing procurement orders.

Selection Notes

Select this component for high-power S-band radar systems requiring robust performance within the 2.9 GHz to 3.4 GHz band. Ensure the design accommodates the specified 65 V drain-source voltage limit and manages heat dissipation to maintain junction temperatures below 225 °C. Verify impedance matching networks align with the provided typical impedance data for optimal power transfer.

Part Context

This part belongs to the BLS9G2934L(S)-400 series of LDMOS transistors manufactured by Ampleon. The 'LS' designation indicates the SOT502B earless flanged ceramic package variant, distinct from the standard flanged version. These devices are engineered specifically for demanding radar environments where high ruggedness and efficiency are critical operational parameters.

Replacement Considerations

The BLS9G2934L-400 serves as the primary alternative within the same product family, differing only in package style (SOT502A vs SOT502B). No other cross-model substitutes are documented in the official datasheet.

BLS9G2934LS-400UBLS9G2934LS-400U
$182.86
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