BLS9G3135L-115U

BLS9G3135L-115U

$99.12
  • Description:RF MOSFET LDMOS 50V CDFM2
  • Series:-

SKU:2c1a959e2914 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:3.1GHz ~ 3.5GHz
  • Gain:11dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:600 mA
  • Power - Output:115W
  • Voltage - Rated:28 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1135A
  • Supplier Device Package:CDFM2
  • Configuration:-

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BLS9G3135L-115U

Overview

The BLS9G3135L-115U is an LDMOS power transistor designed for S-band radar applications operating between 3.1 GHz and 3.5 GHz. It delivers a typical output power of 115 W with a drain efficiency of 49% at VDS = 32 V and IDq = 200 mA. The device features a maximum drain-source voltage of 65 V, a gate-source threshold voltage of 2.5 V, and a junction temperature limit of 225 °C. Packaged in the flanged ceramic SOT1135A outline, it includes integrated dual-sided ESD protection and internal matching for broadband impedance.

Feature Summary

  • Internally matched for broadband operation within the 3.1 GHz to 3.5 GHz frequency range
  • Integrated dual-sided ESD protection providing excellent off-state isolation
  • High ruggedness capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases

Applications

  • S-band radar systems operating in the 3.1 GHz to 3.5 GHz band

Procurement Notes

Verify the specific package variant against the ordering information table. The 'L' suffix indicates the SOT1135A flanged ceramic package with two mounting holes and two leads. Confirm that the procurement order matches this physical form factor to ensure compatibility with the intended mechanical mounting requirements.

Selection Notes

Select this component for high-power S-band radar transmitter stages requiring robust performance under mismatched load conditions. Ensure the thermal management design accommodates the specified transient thermal impedance values and maintains the case temperature at or below 85 °C during pulsed operation to preserve reliability.

Part Context

This part belongs to the Ampleon BLS9G series of LDMOS transistors optimized for S-band radar frequencies. It shares functional similarities with the BLS9G3135LS-115 but differs in its physical package configuration. The series is characterized by high efficiency and excellent thermal stability for demanding radar environments.

Replacement Considerations

The BLS9G3135LS-115 serves as a direct alternative within the same product family. It provides identical electrical specifications but utilizes the SOT1135B earless flanged ceramic package. Verify mechanical fitment before substitution.

BLS9G3135L-115UBLS9G3135L-115U
$99.12
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