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Product Detailed Parameters
- Description：RF TRANS NPN 10V 470MHZ SC-73
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：470MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：2W
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 300mA, 5V
- Current - Collector (Ic) (Max)：500mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SC-73
- Grade：-
- Qualification：-
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Overview
The BLT50,115 is an NPN bipolar RF transistor manufactured by NXP USA Inc. It is housed in a surface-mount SOT-223 (SC-73) package and is currently classified as obsolete. The device features a maximum collector-emitter breakdown voltage of 10V and supports a maximum collector current of 500mA. Its transition frequency is rated at 470MHz, enabling operation suitable for medium-power RF amplification applications within these electrical limits.
Feature Summary
- NPN bipolar junction transistor architecture designed for radio frequency signal processing
- Surface-mount construction utilizing the SOT-223 package format
- Transition frequency specification of 470MHz for RF circuit integration
Applications
- Medium-power RF amplification circuits
- Buffer amplifier stages
- Radio frequency signal processing modules
Procurement Notes
Verify component status carefully as this part is officially listed as obsolete and no longer manufactured by NXP USA Inc. Availability is restricted to existing stock held by distributors rather than direct production runs. Confirm datasheet versions and specific ordering suffixes when sourcing from secondary markets to ensure compatibility with original specifications.
Selection Notes
Select this component only if the design requirements align with its 10V collector-emitter breakdown limit and 500mA current capacity. The 470MHz transition frequency defines its upper operational boundary for RF tasks. Due to its obsolete status, alternative sourcing strategies or redesigns may be necessary for long-term manufacturing viability.
Part Context
This component belongs to the Bipolar RF Transistors category within NXP's discrete semiconductor portfolio. It serves as a specialized active device for high-frequency analog applications. The BLT50,115 designation identifies a specific NPN variant optimized for RF performance characteristics distinct from general-purpose switching transistors.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation due to the component's obsolete status. Designers should consult official replacement guides or contact NXP directly for qualified alternatives that match the required electrical parameters and package dimensions.
