BLT70,115

Overview

The BLT70,115 is an NPN silicon planar epitaxial transistor designed for UHF power applications. It is encapsulated in a plastic SOT223H surface-mount package. The device features a maximum collector-emitter voltage of 8V and a continuous collector current rating of 250mA. It operates with a transition frequency of 900MHz and supports a maximum power dissipation of 2.1W. The component is rated for junction temperatures up to 175°C.

Feature Summary

• NPN silicon planar epitaxial construction
• Designed for high-efficiency UHF power amplification
• Low supply voltage operation capability

Applications

• UHF power amplifier stages
• RF signal generation circuits
• High-frequency communication systems

Procurement Notes

Verify the specific suffix '115' against official NXP documentation to confirm tape-and-reel packaging specifications. Confirm that the SOT223H package dimensions match the design footprint requirements. Check for availability status as some sources indicate this part may be discontinued or subject to change.

Selection Notes

Select this component for applications requiring robust NPN performance at UHF frequencies with moderate power handling. Ensure the thermal management solution accommodates the 2.1W dissipation limit in the SOT223H package. Verify that the 8V voltage rating aligns with the circuit's operating conditions.

Part Context

The BLT70 series represents NXP's line of bipolar RF transistors optimized for UHF bands. These devices are engineered for efficiency and low voltage operation. The BLT70,115 variant specifically utilizes the SOT223H package to provide adequate thermal performance for power amplification tasks in compact form factors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.