BS170-D26Z

$0.35

Description：MOSFET N-CH 60V 500MA TO92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:eda934e92614 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BS170-D26Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 500MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS170-D26Z

Description：MOSFET N-CH 60V 500MA TO92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：830mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Single FETs, MOSFETs datasheet and documents for BS170-D26Z

BS170-D26Z

Single FETs, MOSFETs Overview

The BS170-D26Z is an N-channel enhancement mode field effect transistor manufactured by onsemi using proprietary DMOS technology. It features a TO-92 package with forming leads and tape & reel shipping. Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 500 mA, and maximum power dissipation of 830 mW at 25°C. The device exhibits a gate threshold voltage of 3 V max at 1 mA and a static drain-source on-resistance of 5 Ω max at 10 V gate drive and 200 mA drain current.

Single FETs, MOSFETs Feature Summary

High density cell design for low on-state resistance
Voltage controlled small signal switching capability
Rugged and reliable construction suitable for general purpose applications

Single FETs, MOSFETs Applications

Small servo motor control
Power MOSFET gate drivers
General purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix D26Z to confirm the TO-92 package with forming leads and tape & reel shipping configuration. Ensure compatibility with existing PCB footprints designed for standard through-hole mounting. Confirm that the Pb-Free designation meets environmental compliance requirements for the target assembly process.

Single FETs, MOSFETs Selection Notes

Select this component for low voltage and low current applications requiring fast switching performance. Consider the 60 V breakdown voltage and 500 mA continuous current limits when designing circuits. Evaluate thermal management needs as the maximum power dissipation is limited to 830 mW in free air conditions.

Single FETs, MOSFETs Part Context

This part belongs to the BS170 series of N-channel enhancement mode MOSFETs. It shares core electrical characteristics with the standard BS170 but differs in packaging and shipping format. The device utilizes silicon technology optimized for high cell density to minimize on-resistance while maintaining ruggedness.