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BS250P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 45V 230MA E-LINE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BS250P
- Description：MOSFET P-CH 45V 230MA E-LINE
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：45 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：14Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Single FETs, MOSFETs datasheet and documents for BS250P
Single FETs, MOSFETs Overview
The BS250P is a P-channel enhancement mode vertical DMOS FET manufactured by Diodes Incorporated. It features a drain-source voltage (VDS) of -45 V and a continuous drain current (ID) of -230 mA at +25°C. The device has a maximum static drain-source on-state resistance (RDS(ON)) of 14 Ω at VGS = -10 V. It operates within a temperature range of -55°C to +150°C with a power dissipation of 700 mW.
Single FETs, MOSFETs Feature Summary
- Vertical DMOS technology for P-channel enhancement mode operation
- Designed for automotive applications requiring specific change control
- Capable of high pulsed drain current handling
Single FETs, MOSFETs Applications
- Automotive electronic systems requiring AEC-Q101 qualification
- General purpose switching applications
- Low voltage power management circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific revision status of the datasheet DS33014 Rev. 3-2 before procurement. Confirm if the ordered units meet AEC-Q101 qualification and PPAP requirements, as standard versions may differ from automotive-grade specifications. Check manufacturing facility certification status against IATF 16949 standards if automotive compliance is mandatory for the intended application.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel MOSFET with a 45V rating and low on-resistance is required. Ensure the gate drive voltage can reach -10V to achieve the specified 14Ω RDS(ON). Consider the 700mW power dissipation limit and thermal management needs for continuous operation. Verify that the -230mA continuous current rating meets the load requirements.
Single FETs, MOSFETs Part Context
The BS250P belongs to the family of vertical DMOS field-effect transistors produced by Diodes Incorporated. It is designed to offer improved performance over standard planar technologies. The device utilizes vertical structure to reduce on-resistance while maintaining robust avalanche capability suitable for inductive load switching environments.
Single FETs, MOSFETs Replacement Considerations
Refer to ZVP2106A for alternative graphs and potential functional comparisons. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure the replacement part meets the same automotive qualification standards if applicable.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
