BSB056N10NN3GXUMA1

Single FETs, MOSFETs Overview

The BSB056N10NN3 G is an OptiMOS™ 3 Power-MOSFET with a 100 V drain-source voltage rating. It features a maximum on-resistance of 5.6 mΩ and supports continuous drain currents up to 83 A at 25°C case temperature. The device utilizes the CanPAK MN package (MG-WDSON-5), offering a low profile under 0.7 mm and dual-sided cooling capabilities. Key electrical parameters include a typical total gate charge of 56 nC and an output charge of 73 nC, optimized for high switching frequency DC/DC converter applications.

Single FETs, MOSFETs Feature Summary

• Dual-sided cooling architecture for enhanced thermal management
• Low profile construction suitable for space-constrained designs
• Optimized figure of merit combining low on-resistance and gate charge
• Halogen-free and lead-free plating compliant with RoHS standards

Single FETs, MOSFETs Applications

• High switching frequency DC/DC converters
• Synchronous rectification in power supply modules
• General purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering code including suffixes against official Infineon documentation to ensure correct package and tape/reel specifications. Confirm that the requested variant matches the MG-WDSON-5 package outline and marking requirements. Cross-reference datasheet revision numbers to ensure alignment with current technical parameters and thermal characteristics before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low conduction losses and efficient thermal dissipation in compact form factors. The dual-sided cooling feature allows for reduced thermal resistance compared to single-sided packages. Ensure the application operates within the specified junction temperature range and respects the pulsed drain current limits defined in the safe operating area diagrams.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS™ 3 family, designed for efficiency and reliability in power conversion. The MG-WDSON-5 package provides a robust mechanical solution with defined footprint dimensions for PCB integration. The technology focuses on minimizing switching losses while maintaining high breakdown voltage capabilities for industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists or contact Infineon directly for verified substitute part numbers. Do not assume compatibility based solely on voltage and current ratings; verify pinout, thermal resistance, and package dimensions match the existing design constraints.