BSC009N04LSSCATMA1

Single FETs, MOSFETs Overview

The BSC009N04LSSCATMA1 is an N-channel, logic level OptiMOS Power-MOSFET rated for 40 V drain-source voltage. It features a maximum on-resistance of 0.94 mΩ at 10 V gate drive and supports a continuous drain current of 301 A. The device utilizes a dual-side cooled PG-VSON-8 or PG-WSON-8 package with a junction-to-case bottom thermal resistance of 0.5 K/W. It operates within a temperature range of -55 °C to 175 °C and includes a total gate charge of 95 nC.

Single FETs, MOSFETs Feature Summary

• Dual-side cooled package architecture providing superior thermal resistance for high-power applications
• Optimized for synchronous rectification with very low on-resistance characteristics
• Logic level operation enabling efficient control at standard gate voltages
• 100% avalanche tested to ensure robustness against transient energy events

Single FETs, MOSFETs Applications

• Synchronous rectification in power conversion circuits
• High-efficiency DC-DC converter designs
• Industrial motor control systems requiring high current handling

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix matches the required tape-and-reel packaging configuration. Confirm that the component revision aligns with the latest datasheet version to ensure compatibility with existing design specifications. Cross-reference the manufacturer's official documentation for any updates regarding material content declarations or pinout definitions prior to final procurement authorization.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current density and low conduction losses in a compact footprint. Evaluate the thermal management strategy based on the specific junction-to-case resistance values provided. Ensure the gate driver can supply sufficient voltage to achieve the optimal low on-resistance state while staying within absolute maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS Power-MOSFET family, specifically engineered for 40 V applications. It represents an advancement in silicon performance by integrating logic-level gate structures with advanced packaging technologies. The series targets modern power electronics demanding high efficiency and reliability under extreme operating conditions.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists for direct equivalents. Verify pin compatibility and thermal characteristics before substituting.