BSC010N04LSATMA1

$1.66

Description：MOSFET N-CH 40V 38A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:beed79f3e5f4 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC010N04LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 38A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC010N04LSATMA1

Description：MOSFET N-CH 40V 38A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6800 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8 FL
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC010N04LSATMA1

BSC010N04LSATMA1

Single FETs, MOSFETs Overview

The BSC010N04LSATMA1 is an N-channel OptiMOS Power-MOSFET with a 40V drain-source breakdown voltage. It features a maximum on-resistance of 1.0mΩ at VGS=10V and a continuous drain current of 292A at TC=25°C. The device operates within a junction temperature range of -55°C to 175°C, utilizing a PG-TDSON-8 package. Key electrical parameters include a total gate charge of 95nC (at VGS=20V) and 84nC for synchronous FET applications. Thermal resistance from junction to case is typically 0.5K/W.

Single FETs, MOSFETs Feature Summary

Optimized for synchronous rectification with very low on-resistance
Fully qualified according to JEDEC standards for industrial applications
Features enlarged source interconnection for higher solder joint reliability
100% avalanche tested with superior thermal resistance characteristics

Single FETs, MOSFETs Applications

Synchronous rectification in power conversion circuits
Industrial applications requiring high reliability
Medium to high power DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets all required JEDEC qualification standards for intended industrial environments. Cross-reference datasheet revision 2.5 for accurate thermal derating curves and absolute maximum ratings prior to final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V logic-level N-channel MOSFET with high current handling capability is required. The PG-TDSON-8 package provides efficient thermal dissipation suitable for compact designs. Consider the 175°C operating temperature rating for robust performance in demanding thermal conditions compared to standard 150°C alternatives.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS Power-MOSFET family, specifically designed for 40V applications. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The product line emphasizes reliability through comprehensive testing protocols and optimized package designs for modern surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the PG-TDSON-8 footprint and maintains equivalent or superior electrical parameters, particularly RDS(on) and thermal resistance values.