BSC012N06NSATMA1

$3.37

Description：MOSFET N-CH 60V 100A TSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ed4124c2ebf1 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSC012N06NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 100A TSON-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC012N06NSATMA1

Description：MOSFET N-CH 60V 100A TSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：36A (Ta), 306A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs：143 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11000 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：214W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSON-8-3
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC012N06NSATMA1

BSC012N06NSATMA1

Single FETs, MOSFETs Overview

The BSC012N06NSATMA1 is an OptiMOS 5 power transistor featuring a 60 V drain-source breakdown voltage and a maximum on-state resistance of 1.2 mΩ at VGS=10V. It supports a continuous drain current of 100 A at TC=25°C and handles pulsed currents up to 400 A. The device utilizes a TSON-8-3 surface-mount package with a thermal resistance (junction-case) of 0.7 K/W maximum. It operates within a temperature range of -55°C to +175°C, includes 100% avalanche testing, and exhibits a total gate charge of 143 nC.

Single FETs, MOSFETs Feature Summary

Optimized for synchronous rectification applications
Superior thermal resistance characteristics
Higher solder joint reliability due to enlarged source interconnection

Single FETs, MOSFETs Applications

Synchronous rectification circuits
Industrial power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the component matches the specific Infineon Technologies part number BSC012N06NSATMA1. Confirm the package type is TSON-8-3 and that it meets RoHS compliance standards. Ensure the ordering code corresponds to the final data sheet revision Rev. 2.1 dated 2018-12-11. Cross-reference electrical parameters against official documentation to validate performance requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses in 60 V environments. The high current capability and optimized thermal profile suit compact power stages. Evaluate the gate charge and switching times against driver capabilities. Consider the TSON-8-3 footprint constraints and ensure adequate PCB copper area for heat dissipation to maintain junction temperatures within limits.

Single FETs, MOSFETs Part Context

This N-channel MOSFET belongs to the OptiMOS 5 family from Infineon Technologies. It is designed for industrial applications qualified according to JEDEC standards. The technology leverages silicon planar trench gate structures to achieve low RDS(on) and fast switching speeds while maintaining robust avalanche energy handling capabilities.