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BSC014N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 34A/100A TDSON. Review the specifications below when checking this part for your BOM.
The BSC014N03LSGATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 3 series. It features a TDSON-8 surface-mount package with eight pins. The device supports a maximum drain-source voltage of 30 V and a continuous drain current of 100 A. Key electrical parameters include a maximum on-resistance of 2.1 mΩ, a gate threshold voltage range of 1 V to 2.2 V, and a typical gate charge of 98 nC at 10 V. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix 'GATMA1' against official datasheets to confirm tape-and-reel packaging and RoHS compliance status. Ensure the component matches the exact OptiMOS 3 generation specifications before integration into designs requiring precise thermal and electrical characteristics.
Select this component when a 30 V rating and 100 A current capacity are required in a compact TDSON-8 footprint. Consider the 2.1 mΩ on-resistance for conduction loss calculations and verify that the logic-level gate threshold aligns with the available drive voltage levels in the target circuit design.
This part belongs to the OptiMOS 3 family, designed for general-purpose power switching applications. It utilizes Infineon's proprietary trench technology to achieve superior performance compared to standard planar MOSFETs in similar voltage classes.
Cross-reference with other OptiMOS 3 variants such as BSC014N03LS or BSC030N03LSGATMA1 if different resistance or current ratings are acceptable.
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