ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC015NE2LS5IATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 33A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC015NE2LS5IATMA1
- Description：MOSFET N-CH 25V 33A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：33A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC015NE2LS5IATMA1
Single FETs, MOSFETs Overview
The BSC015NE2LS5I is an OptiMOS™ 5 N-channel Power-MOSFET with a 25 V drain-source breakdown voltage. It features a maximum on-resistance of 1.5 mΩ at VGS=4.5 V and supports a continuous drain current of 147 A at TC=25°C. The device includes a monolithic integrated Schottky-like diode and is qualified according to JEDEC standards. Key electrical parameters include a gate charge (QG) of 10.5 nC at VGS=4.5 V, an output charge (QOSS) of 17.5 nC, and a pulsed drain current capability of 588 A.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converters
- Monolithic integrated Schottky-like diode
- Very low on-resistance at VGS=4.5 V
- 100% avalanche tested
Single FETs, MOSFETs Applications
- Buck converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package and marking identification. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications, prior to integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low gate charge and optimized performance in synchronous rectification or buck converter topologies. Ensure thermal management aligns with the specified junction-to-case resistance and power dissipation limits under intended operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family from Infineon Technologies, designed for efficient power switching. It utilizes a PG-TDSON-8 package to provide compact footprint solutions while maintaining robust electrical characteristics suitable for modern power supply architectures.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the 25 V rating, TDSON-8 package, and equivalent RDS(on) and QG specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
