Single FETs, MOSFETs BSC016N06NSTATMA1 product image

BSC016N06NSTATMA1

$3.30
  • Description:MOSFET N-CH 60V 31A/100A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:62195e5aac60 Category: Brand:

  
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BSC016N06NSTATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 31A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC016N06NSTATMA1

  • Description:MOSFET N-CH 60V 31A/100A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:31A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:1.6mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:3.3V @ 95µA
  • Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):3W (Ta), 167W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8 FL
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC016N06NSTATMA1

BSC016N06NSTATMA1

Single FETs, MOSFETs Overview

The BSC016N06NSTATMA1 is an N-channel OptiMOS Power-MOSFET rated for a drain-source voltage of 60 V. It features a maximum on-state resistance of 1.6 mΩ at VGS=10V and ID=50A, with a continuous drain current capability of 234 A at TC=25°C. The device utilizes the PG-TDSON-8 FL package with enlarged source interconnections to enhance solder joint reliability. It supports junction temperatures up to 175°C and includes 100% avalanche testing.

Single FETs, MOSFETs Feature Summary

  • Optimized specifically for synchronous rectification applications
  • Features enlarged source interconnection for higher solder joint reliability
  • Rated for operation up to 175°C junction temperature
  • Qualified according to JEDEC standards for target applications

Single FETs, MOSFETs Applications

  • Synchronous rectification circuits
  • Power conversion systems requiring high thermal performance
  • Automotive and industrial power electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure that the PG-TDSON-8 FL footprint matches the design requirements. Cross-reference the latest datasheet revision to confirm current ratings and thermal characteristics remain unchanged.

Single FETs, MOSFETs Selection Notes

Select this component when low on-state resistance and high current handling are required in a compact surface-mount form factor. The 175°C rating allows for operation in thermally constrained environments. Verify gate charge parameters against driver capabilities to ensure efficient switching performance in synchronous topologies.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS Power-MOSFET family, designed for differentiated MOSFET applications. It shares the TDSON-8 FL package architecture with other devices in the series, offering enhanced thermal dissipation through bottom-side cooling capabilities inherent to the package design.

Single FETs, MOSFETs Replacement Considerations

BSC016N06NST

Single FETs, MOSFETs FAQ

What is the maximum junction temperature rating?

The device is rated for an operating and storage temperature range up to 175°C.

How does the package improve reliability?

The PG-TDSON-8 FL package features enlarged source interconnections, which provide higher solder joint reliability compared to standard packages.

BSC016N06NSTATMA1BSC016N06NSTATMA1
$3.30
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