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BSC016N06NSTATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 31A/100A TDSON. Review the specifications below when checking this part for your BOM.
The BSC016N06NSTATMA1 is an N-channel OptiMOS Power-MOSFET rated for a drain-source voltage of 60 V. It features a maximum on-state resistance of 1.6 mΩ at VGS=10V and ID=50A, with a continuous drain current capability of 234 A at TC=25°C. The device utilizes the PG-TDSON-8 FL package with enlarged source interconnections to enhance solder joint reliability. It supports junction temperatures up to 175°C and includes 100% avalanche testing.
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure that the PG-TDSON-8 FL footprint matches the design requirements. Cross-reference the latest datasheet revision to confirm current ratings and thermal characteristics remain unchanged.
Select this component when low on-state resistance and high current handling are required in a compact surface-mount form factor. The 175°C rating allows for operation in thermally constrained environments. Verify gate charge parameters against driver capabilities to ensure efficient switching performance in synchronous topologies.
This part belongs to the Infineon OptiMOS Power-MOSFET family, designed for differentiated MOSFET applications. It shares the TDSON-8 FL package architecture with other devices in the series, offering enhanced thermal dissipation through bottom-side cooling capabilities inherent to the package design.
BSC016N06NST
The device is rated for an operating and storage temperature range up to 175°C.
The PG-TDSON-8 FL package features enlarged source interconnections, which provide higher solder joint reliability compared to standard packages.
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