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BSC021N08NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET TRENCH 80V TSON-8. Review the specifications below when checking this part for your BOM.
The BSC021N08NS5ATMA1 is a single N-channel enhancement mode power MOSFET from Infineon's OptiMOS 5 series. It features an 80 V drain-source voltage rating and a continuous drain current of 100 A at 25°C. The device exhibits a maximum on-resistance of 2.1 mΩ at 10 V gate drive. Key electrical parameters include a gate charge of 117 nC, threshold voltage of 2.2 V, and power dissipation of 214 W. It operates within a temperature range of -55°C to +175°C and utilizes a TSON-8 surface-mount package.
Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference datasheet revisions to validate thermal characteristics and electrical limits against specific design requirements.
Select this component when low conduction losses are critical in 80 V systems. The TSON-8 package offers compact footprint advantages for space-constrained designs. Evaluate thermal management needs based on the specified power dissipation and junction-to-ambient resistance values for the target application environment.
This device belongs to the BSC021N08 family within the broader OptiMOS 5 portfolio. It shares architectural similarities with other 80 V SuperSO8 devices but distinguishes itself through specific Rds(on) and current handling capabilities defined by its unique part designation.
Direct substitutes include BSC026N08NS5ATMA1 and BSC030N08NS5. Verify pinout compatibility and thermal resistance specifications before implementation.
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