BSC025N03MSGATMA1

$1.22

Description：MOSFET N-CH 30V 100A TDSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b984f1116f60 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC025N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 100A TDSON-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC025N03MSGATMA1

Description：MOSFET N-CH 30V 100A TDSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：23A (Ta). 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7600 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC025N03MSGATMA1

BSC025N03MSGATMA1

Single FETs, MOSFETs Overview

The BSC025N03MSGATMA1 is an N-channel OptiMOS 3 M-Series Power-MOSFET with a 30 V drain-source breakdown voltage. It features a PG-TDSON-8 package and supports continuous drain currents up to 147 A at TC=25°C (VGS=10 V). The maximum on-resistance is 2.5 mΩ at VGS=10 V and 3 mΩ at VGS=4.5 V. Key dynamic parameters include a total gate charge of 74 nC (at VGS=10 V) and a typical input capacitance of 5700 pF. The device operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Optimized for 5 V driver applications such as notebooks, VGA circuits, and point-of-load converters.
Features low figure of merit for switching (FOMSW) suitable for high-frequency switch-mode power supplies.
Includes 100% avalanche testing for enhanced ruggedness.

Single FETs, MOSFETs Applications

Notebook power management
VGA circuitry
Point-of-load (POL) converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure compatibility with required packaging or marking variations. Confirm that the component meets all relevant JEDEC qualification standards intended for the target application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance at 4.5 V gate drive is critical for efficiency in compact power stages. Ensure the thermal design accommodates the specified junction-to-case resistance and that the PCB layout provides sufficient copper area for optimal heat dissipation.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS 3 M-Series, designed for low-voltage, high-current applications. It utilizes SuperSO8 technology to deliver superior thermal resistance compared to standard packages, enabling higher power density in space-constrained designs.